High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

This is a preview of subscription content, access via your institution.


  1. 1

    Inguimbert C, Ecoffet R, Falguere D. Electron induced SEUs: microdosimetry in nanometric volumes. IEEE Trans Nucl Sci, 2015, 62: 2846–2852

    Article  Google Scholar 

  2. 2

    Zhao Y, Wang L, Yue S, et al. SEU and SET of 65 nm Bulk CMOS flip-flops and their implications for RHBD. IEEE Trans Nucl Sci, 2015, 62: 2666–2672

    Article  Google Scholar 

  3. 3

    Zhao X Y, Wang L, Yue S G. Single event transients of scan flip-flop and an SET-immune redundant delay filter (RDF). In: Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Oxford, 2013. 1–5

    Google Scholar 

  4. 4

    Yue S, Zhang X, Zhao X. Single event transient pulse width measurement of 65-nm bulk CMOS circuits. J Semicond, 2015, 36: 115006

    Article  Google Scholar 

  5. 5

    Jagannathan S, Gadlage M J, Bhuva B L, et al. Independent measurement of SET pulse widths from N-hits and P-hits in 65-nm CMOS. IEEE Trans Nucl Sci, 2010, 57: 3386–3391

    Google Scholar 

  6. 6

    Cannon E H, Cabanas-Holmen M. Heavy ion and high energy proton-induced single event transients in 90 nm inverter, NAND and NOR gates. IEEE Trans Nucl Sci, 2009, 56: 3511–3518

    Article  Google Scholar 

  7. 7

    Clemens M A, Hooten N C, Ramachandran V, et al. The effect of high-z materials on proton-induced charge collection. IEEE Trans Nucl Sci, 2010, 57: 3212–3218

    Google Scholar 

Download references


This work was supported in part by the National Natural Science Foundation of China (Grant Nos. 11690045, 61674015).

Author information



Corresponding author

Correspondence to Yuanfu Zhao.

Additional information

The authors declare that they have no conflict of interest.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Liu, J., Zhao, Y., Wang, L. et al. High energy proton and heavy ion induced single event transient in 65-nm CMOS technology. Sci. China Inf. Sci. 60, 120405 (2017). https://doi.org/10.1007/s11432-017-9254-2

Download citation