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High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

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This work was supported in part by the National Natural Science Foundation of China (Grant Nos. 11690045, 61674015).

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Correspondence to Yuanfu Zhao.

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The authors declare that they have no conflict of interest.

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Liu, J., Zhao, Y., Wang, L. et al. High energy proton and heavy ion induced single event transient in 65-nm CMOS technology. Sci. China Inf. Sci. 60, 120405 (2017). https://doi.org/10.1007/s11432-017-9254-2

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