Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods

Science China Information Sciences volume 60, Article number: 120402 (2017) Cite this article

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 11305126, 11235008) and Foundation of State Key Laboratory of China (Grant No. SKLIPR1211).

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Affiliations

  1. State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an, 710024, China

    Yuanyuan Xue, Zujun Wang, Minbo Liu, Baoping He, Zhibin Yao, Jiangkun Sheng, Wuying Ma, Guantao Dong & Junshan Jin

Authors
  1. Yuanyuan Xue
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  2. Zujun Wang
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  3. Minbo Liu
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  4. Baoping He
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  5. Zhibin Yao
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  6. Jiangkun Sheng
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  7. Wuying Ma
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  8. Guantao Dong
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  9. Junshan Jin
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Corresponding author

Correspondence to Zujun Wang.

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The authors declare that they have no conflict of interest.

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Xue, Y., Wang, Z., Liu, M. et al. Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods. Sci. China Inf. Sci. 60, 120402 (2017). https://doi.org/10.1007/s11432-017-9250-7

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