Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

This is a preview of subscription content, access via your institution.

References

  1. 1

    Cressler J D, Niu G F. Silicon-Germanium Heterojunction Bipolar Transistors. Boston: Artech House, 2003. 22–30

    Google Scholar 

  2. 2

    Cressler J D. Radiation effects in SiGe technology. IEEE Trans Nucl Sci, 2013, 60: 1992–2014

    Article  Google Scholar 

  3. 3

    Xu Z Y, Niu G F, Luo L, et al. Charge collection and SEU in SiGe HBT current mode logic operating at cryogenic temperatures. IEEE Trans Nucl Sci, 2010, 57: 3206–3211

    Google Scholar 

  4. 4

    Varadharajaperumal M. 3D simulation of SEU in SiGe HBTS and radiation hardening by design. Dissertation for Ph.D. Degree. Alabama: Auburn University, 2010. 89–93

    Google Scholar 

  5. 5

    Fleetwood Z E, Lourenco N E, Ildefonso A, et al. Using TCAD modeling to compare heavy-ion and laserinduced single event transients in SiGe HBTs. IEEE Trans Nucl Sci, 2017, 64: 398–405

    Article  Google Scholar 

  6. 6

    Zhang J X, Guo H X, Wen L, et al. 3-D simulation of angled strike heavy-ion induced charge collection in silicon-germanium heterojunction bipolar transistors. J Semicond, 2014, 35: 044003

    Article  Google Scholar 

  7. 7

    Zhang J X, He C H, Guo H X, et al. 3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. Microelectron Reliab, 2015, 55: 1180–1186

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61704127, 61574171, 11175138). Thanks for the Institute of Microelectronics, Tsinghua University. Thanks for China Institute of Atomic Energy.

Author information

Affiliations

Authors

Corresponding author

Correspondence to Hongxia Guo.

Additional information

The authors declare that they have no conflict of interest.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Zhang, J., Guo, H., Zhang, F. et al. Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor. Sci. China Inf. Sci. 60, 120404 (2017). https://doi.org/10.1007/s11432-017-9249-6

Download citation