Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

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This work was supported by National Natural Science Foundation of China (Grant Nos. 61704127, 61574171, 11175138). Thanks for the Institute of Microelectronics, Tsinghua University. Thanks for China Institute of Atomic Energy.

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Correspondence to Hongxia Guo.

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The authors declare that they have no conflict of interest.

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Zhang, J., Guo, H., Zhang, F. et al. Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor. Sci. China Inf. Sci. 60, 120404 (2017). https://doi.org/10.1007/s11432-017-9249-6

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