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This work was supported by National Natural Science Foundation of China (Grant Nos. 61534008, 11675259, 11275262, 61640401), 1000-Talent Project of Xinjiang Technical Institute of Physical & Chemical, Chinese Academy of Sciences (Grant No. Y52H121101).
The authors declare that they have no conflict of interest.
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Figure 1 (a) Schematic cross-section of the device structure, (b) Simulated trajectory of electron beam across material using CASINO, (c) Normalized Voc as a function of electron fluence and displacement damage dose (d) Dark I-V curves before and after irradiation, (e) and (f) External Quantum Efficiency of InGaAsP/InGaAs double-junction and InGaAs single-junction solar cell before (black curves) and after irradiation (colored curves), respectively, at different electron fluence levels.
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Zhao, X., Heini, M., Sailai, M. et al. 1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells. Sci. China Inf. Sci. 60, 120403 (2017). https://doi.org/10.1007/s11432-017-9248-2