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This work was supported in part by National Natural Science Foundation of China (Grant No. 61634008) and Youth Innovation Promotion Association CAS (Grant No. 2014101).
The authors declare that they have no conflict of interest.
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Xu, Y., Bi, J., Xu, G. et al. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. Sci. China Inf. Sci. 60, 120401 (2017). https://doi.org/10.1007/s11432-017-9239-5