High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels

  • Chao Yang
  • Xiaorong Luo
  • Siyu Deng
  • Fu Peng
  • Bo Zhang
Research Paper


In this paper, we present a novel high-voltage low on-resistance trench-gate (TG) hole-gas enhancement-mode (E-mode) high-electron mobility transistor (HEMT) with multi-conduction channels (MCs) and investigate its mechanism using simulations. This device features a repetitive AlN/GaN heterojunction unit and a GaN/Al0.26Ga0.74N hetero-junction. Its source and drain are located on the same side of the metal-insulator-semiconductor (MIS) TG, and the source is located beside the gate. During operation, first, 2-D electron gas (2DEG) forms MCs at multiple AlN/GaN hetero-interfaces. These MCs result in ultra-low specific on-resistance (R on,sp) and improved transconductance (g m). Second, 2-D hole gas (2DHG) is induced at the GaN/Al0.26Ga0.74N hetero-interface to prevent electrons from being injected from the source to the MCs. As such, E-mode operation is realized, which exceeds the performance of the conventional E-mode method by depleting the 2DEG under the gate. Third, in the off-state, 2DHG and 2DEG are depleted into negative and positive charges, respectively, thereby forming the polarization junction. This depletion region is extended due to the electric field (E-field) modulation effect by the polarization junction, thereby achieving an enhanced breakdown voltage (BV). Fourth, the drain-induced barrier lowering (DIBL) effect is significantly suppressed, which ensures a high BV and low leakage current. Additionally, due to the unique source location, the TG-MC-HEMT is smaller than the conventional MIS AlGaN/GaN HEMT (Con-HEMT). The BV of the TG-MC-HEMT is 604 V and the R on,sp value can be as small as 0.38 mΩ·cm2.


multi-conduction channels 2-D hole gas polarization-junction high-voltage low specific onresistance drain-induced barrier lowering effect 



This work was supported in part by National Natural Science Foundation of China (Grant No. 51677021) and Fundamental Research Funds for the Central Universities (Grant No. ZYGX2014Z006).


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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2017

Authors and Affiliations

  • Chao Yang
    • 1
  • Xiaorong Luo
    • 1
  • Siyu Deng
    • 1
  • Fu Peng
    • 1
  • Bo Zhang
    • 1
  1. 1.State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengduChina

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