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High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels

  • Chao Yang
  • Xiaorong Luo
  • Siyu Deng
  • Fu Peng
  • Bo Zhang
Research Paper
  • 171 Downloads

Abstract

In this paper, we present a novel high-voltage low on-resistance trench-gate (TG) hole-gas enhancement-mode (E-mode) high-electron mobility transistor (HEMT) with multi-conduction channels (MCs) and investigate its mechanism using simulations. This device features a repetitive AlN/GaN heterojunction unit and a GaN/Al0.26Ga0.74N hetero-junction. Its source and drain are located on the same side of the metal-insulator-semiconductor (MIS) TG, and the source is located beside the gate. During operation, first, 2-D electron gas (2DEG) forms MCs at multiple AlN/GaN hetero-interfaces. These MCs result in ultra-low specific on-resistance (R on,sp) and improved transconductance (g m). Second, 2-D hole gas (2DHG) is induced at the GaN/Al0.26Ga0.74N hetero-interface to prevent electrons from being injected from the source to the MCs. As such, E-mode operation is realized, which exceeds the performance of the conventional E-mode method by depleting the 2DEG under the gate. Third, in the off-state, 2DHG and 2DEG are depleted into negative and positive charges, respectively, thereby forming the polarization junction. This depletion region is extended due to the electric field (E-field) modulation effect by the polarization junction, thereby achieving an enhanced breakdown voltage (BV). Fourth, the drain-induced barrier lowering (DIBL) effect is significantly suppressed, which ensures a high BV and low leakage current. Additionally, due to the unique source location, the TG-MC-HEMT is smaller than the conventional MIS AlGaN/GaN HEMT (Con-HEMT). The BV of the TG-MC-HEMT is 604 V and the R on,sp value can be as small as 0.38 mΩ·cm2.

Keywords

multi-conduction channels 2-D hole gas polarization-junction high-voltage low specific onresistance drain-induced barrier lowering effect 

Notes

Acknowledgments

This work was supported in part by National Natural Science Foundation of China (Grant No. 51677021) and Fundamental Research Funds for the Central Universities (Grant No. ZYGX2014Z006).

References

  1. 1.
    Paul C T, Ritu T. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices. IEEE Trans Electron Dev, 1994, 41: 1481–1483CrossRefGoogle Scholar
  2. 2.
    Ishida M, Ueda T, Tanaka T, et al. GaN on Si technologies for power switching devices. IEEE Trans Electron Dev, 2013, 60: 3053–3059CrossRefGoogle Scholar
  3. 3.
    Wang M J, Wang Y, Zhang C, et al. 900 V/1.6 mΩ·cm2 normally Off Al2O3/GaN MOSFET on silicon substrate. IEEE Trans Electron Dev, 2014, 61: 2035–2040CrossRefGoogle Scholar
  4. 4.
    Yang S, Lu Y Y, Liu S H, et al. Impact of VTH shift on RON in E/D-Mode GaN-on-Si power transistors: role of dynamic stress and gate overdrive. In: Proceedings of the 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, 2016. 263–266Google Scholar
  5. 5.
    Lu Y Y, Li B K, Tang X, et al. Normally OFF Al2O3-AlGaN/GaN MIS-HEMT with transparent gate electrode for gate degradation investigation. IEEE Trans Electron Dev, 2015, 62: 821–827CrossRefGoogle Scholar
  6. 6.
    Choi W, Seok O, Ryu H, et al. High-voltage and low-leakage-current gate recessed normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD-SiNx/RF-Sputtered-HfO2. IEEE Electron Dev Lett, 2014, 35: 175–177CrossRefGoogle Scholar
  7. 7.
    Zhou Q, Liu L, Zhang A B, et al. 7.6 V threshold voltage high performance normally-off Al2O3/GaN MOSFET achieved by interface charge engineering. IEEE Electron Dev Lett, 2015, 37: 165–168CrossRefGoogle Scholar
  8. 8.
    Xiong J Y, Yang C, Wei J, et al. Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer. Sci China Inf Sci, 2016, 59: 042410CrossRefGoogle Scholar
  9. 9.
    Tang Z K, Jiang Q M, Lu Y Y, et al. 600-V Normally off SiNx/AlGaN/GaN MIS-HEMT with large gate swing and low current collapse. IEEE Electron Dev Lett, 2013, 34: 1373–1375CrossRefGoogle Scholar
  10. 10.
    Cai Y, Zhou Y G, Chen K J, et al. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment. IEEE Electron Dev Lett, 2005, 26: 435–437CrossRefGoogle Scholar
  11. 11.
    Feng Z H, Zhou R, Xie S Y, et al. 18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma ion implantation. IEEE Electron Dev Lett, 2010, 31: 1386–1388CrossRefGoogle Scholar
  12. 12.
    Su L Y, Lee F, Huang J J. Enhancement-mode GaN-based high-electron mobility transistors on the Si substrate with a P-Type GaN cap layer. IEEE Trans Electron Dev, 2014, 61: 460–465CrossRefGoogle Scholar
  13. 13.
    Uemoto Y, Hikita M, Ueno H, et al. A normally-off AlGaN/GaN transistor with RonA=2.6 mΩ·cm2 and BVds=640 V using conductivity modulation. In: Proceedings of Electron Devices Meeting (IEDM), San Francisco, 2006. 1–4Google Scholar
  14. 14.
    Hung T, Park P S, Krishnamoorthy S, et al. Interface charge engineering for enhancement-mode GaN MISHEMTs. IEEE Electron Dev Lett, 2014, 35: 312–314CrossRefGoogle Scholar
  15. 15.
    Kim K W, Jung S D, Kim D S, et al. Effects of TMAH treatment on device performance of normally off Al2O3/GaN MOSFET. IEEE Electron Dev Lett, 2011, 32: 1376–1378CrossRefGoogle Scholar
  16. 16.
    Neugebauer J, van de Walle C G. Role of hydrogen in doping of GaN. Appl Phys Lett, 1996, 68: 1829–1831CrossRefGoogle Scholar
  17. 17.
    Nakajima A, Sumida Y, Dhyani M H, et al. GaN-based super heterojunction field effect transistors using the polarization junction concept. IEEE Electron Dev Lett, 2011, 32: 542–544CrossRefGoogle Scholar
  18. 18.
    Hilt O, Brunner F, Cho E, et al. Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC’s (ISPSD), San Diego, 2011. 239–242Google Scholar
  19. 19.
    Song D, Liu J, Cheng Z Q, et al. Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse. IEEE Electron Dev Lett, 2007, 28: 189–191CrossRefGoogle Scholar
  20. 20.
    Wei J, Liu S H, Li B K, et al. Low on-resistance normally-off GaN double-channel metal-oxide-semiconductor highelectron-mobility transistor. IEEE Electron Dev Lett, 2015, 36: 1287–1290CrossRefGoogle Scholar
  21. 21.
    Wei J, Jiang H P, Jiang QM, et al. Proposal of a GaN/SiC hybrid field-effect transistor for power switching applications. IEEE Trans Electron Dev, 2016, 63: 2469–2473CrossRefGoogle Scholar
  22. 22.
    Bougrov V, Levinshtein M E, Rumyantsev S L, et al. Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. New York: John Wiley & Sons, Inc. 2001. 1–30Google Scholar
  23. 23.
    Lu B, Matioli E, Palacios T. Tri-gate normally-off GaN power MISFET. IEEE Electron Dev Lett, 2012, 33: 360–362CrossRefGoogle Scholar
  24. 24.
    Yang C, Xiong J Y, Wei J, et al. Analytical model and new structure of the enhancement-mode polarization-junction HEMT with vertical conduction channel. Superlattice Microst, 2016, 92: 92–99CrossRefGoogle Scholar
  25. 25.
    Zhou Q, Chen W J, Liu S H, et al. Schottky-contact technology in InAlN/GaN HEMTs for breakdown voltage improvement. IEEE Trans Electron Dev, 2013, 60: 1075–1081CrossRefGoogle Scholar

Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2017

Authors and Affiliations

  • Chao Yang
    • 1
  • Xiaorong Luo
    • 1
  • Siyu Deng
    • 1
  • Fu Peng
    • 1
  • Bo Zhang
    • 1
  1. 1.State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengduChina

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