A study of residual characteristics in floating gate transistors

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This work was supported by National Natural Science Foundation of China (Grant No. 61376032) and Tianjin Science and Technology Project of China (Grant No. 15ZCZDGX00180).

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Correspondence to Mao Ye.

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Wang, J., Zhao, Y., Xin, R. et al. A study of residual characteristics in floating gate transistors. Sci. China Inf. Sci. 61, 069402 (2018). https://doi.org/10.1007/s11432-017-9145-2

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