A study of residual characteristics in floating gate transistors




This work was supported by National Natural Science Foundation of China (Grant No. 61376032) and Tianjin Science and Technology Project of China (Grant No. 15ZCZDGX00180).


  1. 1.
    Qiao F Y, Pan L Y, Yu X, et al. Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology. Sci China Inf Sci, 2014, 57: 062402CrossRefGoogle Scholar
  2. 2.
    Gutmann P. Data remanence in semiconductor devices. In: Proceedings of the 10th Conference on USENIX Security Symposium, Berkeley, 2001. 39–54Google Scholar
  3. 3.
    Skorobogatov S. Data remanence in flash memory devices. In: Proceedings of the 7th International Workshop on Cryptographic Hardware and Embedded Systems. Berlin: Springer, 2005. 339–353Google Scholar
  4. 4.
    Waker B S. National Industrial Security Program. Operating Manual, 1995Google Scholar
  5. 5.
    Verma G, Mielke N. Reliability performance of ETOX based flash memories. In: Proceedings of the 26th Annual Proceedings Reliability Physics Symposium, Monterey, 1988. 158–166Google Scholar
  6. 6.
    Liu L F, Wu D, Liu X M,et al. A 1G-cell floatinggate NOR flash memory in 65 nm technology with 100 ns random access time. Sci China Inf Sci, 2015, 58: 042405Google Scholar
  7. 7.
    Micheloni R, Crippa L, Marelli A. Inside NAND Flash Memories. New York: Springer Science & Business Media, 2010. 60–62CrossRefGoogle Scholar
  8. 8.
    Santa C. Atlas User’s Manual, 2010Google Scholar

Copyright information

© Science China Press and Springer-Verlag GmbH Germany 2017

Authors and Affiliations

  • Jia Wang
    • 1
    • 2
  • Yiqiang Zhao
    • 1
    • 2
  • Ruishan Xin
    • 1
    • 2
  • Mao Ye
    • 1
    • 2
  1. 1.School of MicroelectronicsTianjin UniversityTianjinChina
  2. 2.Tianjin Key Laboratory of Imaging and Sensing Microelectronic TechnologyTianjin UniversityTianjinChina

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