A study of residual characteristics in floating gate transistors

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Notes

Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant No. 61376032) and Tianjin Science and Technology Project of China (Grant No. 15ZCZDGX00180).

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Copyright information

© Science China Press and Springer-Verlag GmbH Germany 2017

Authors and Affiliations

  • Jia Wang
    • 1
    • 2
  • Yiqiang Zhao
    • 1
    • 2
  • Ruishan Xin
    • 1
    • 2
  • Mao Ye
    • 1
    • 2
  1. 1.School of MicroelectronicsTianjin UniversityTianjinChina
  2. 2.Tianjin Key Laboratory of Imaging and Sensing Microelectronic TechnologyTianjin UniversityTianjinChina

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