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Loveless T D, Alles M L, Ball D R, et al. Parametric variability affecting 45 nm SOI SRAM single event upset cross-section. IEEE Trans Nucl Sci, 2010, 57: 3228–3233
Kauppila A V, Bhuva B L, Kauppila J S, et al. Impact of process variations on SRAM single event upsets. IEEE Trans Nucl Sci, 2011, 58: 834–839
Peng H K, Wen C, Bhadra J. On soft error rate analysis of scaled CMOS designs: a statistical perspective. In: Proceedings of IEEE/ACM International Conference on Computer-Aided Design, San Jose, 2009. 157–163
Gasiot G, Castelnovo A, Glorieux M, et al, Process variability effect on soft error rate by characterization of large number of samples. IEEE Trans Nucl Sci, 2012, 59: 2914–2919
Mostafa H, Anis M, Elmasry M, et al. A designoriented soft error rate variation model accounting for both die-to-die and within-die variations in submicrometer CMOS SRAM cells. IEEE Trans Cric Syst, 2010, 57: 1298–1311
Kauppila A V, Bhuva B L, Massengill L W, et al. Impact of process variations and charge sharing on the single event upset response of flip-flops. IEEE Trans Nucl Sci, 2011, 58: 2658–2663
Liang B, Song R Q. Analyzing and mitigating the internal single-event transient in radiation hardened flipflops at circuit-level. Sci China Tech Sci, 2014, 57: 1–6
Song R Q, Chen S M, He Y B, et al. Flip-flops soft error rate evaluation approach considering internal single-event transient. Sci China Inf Sci, 2015, 58: 062403
Artola L, Hubert G, Warren K M, et al. SEU prediction from SET model using multi-node collection in Bulk transistors and SRAMs down to the 65 nm technology node. IEEE Trans Nucl Sci, 2011, 58: 1338–1346
Song R Q, Chen S M, Huang P C, et al. PABAM: a physics-based analytical model to estimate bipolar amplification effect induced collected charge at circuit level. IEEE Trans Device Mater Rel, 2015, 15: 595–603
This work was supported by National Natural Science Foundation of China (Grant Nos. 61376109, 61434007). The authors would like to thank the HI-13 team and the HIRFL team for heavy ion experiment support.
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Song, R., Chen, S., Liang, B. et al. Modeling the impact of process and operation variations on the soft error rate of digital circuits. Sci. China Inf. Sci. 60, 129402 (2017). https://doi.org/10.1007/s11432-016-9001-9