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3D resistive RAM cell design for high-density storage class memory—a review

Science China Information Sciences volume 59, Article number: 061403 (2016) Cite this article

Abstract

In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaO x /TiO2 bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.

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Authors and Affiliations

  1. Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan, China

    Boris Hudec, Chung-Wei Hsu, I-Ting Wang, Wei-Li Lai, Che-Chia Chang, Taifang Wang & Tuo-Hung Hou

  2. Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovak Republic

    Karol Fröhlich

  3. Winbond Electronics Corporation, Taichung, China

    Chia-Hua Ho & Chen-Hsi Lin

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  1. Boris Hudec
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Hudec, B., Hsu, CW., Wang, IT. et al. 3D resistive RAM cell design for high-density storage class memory—a review. Sci. China Inf. Sci. 59, 061403 (2016). https://doi.org/10.1007/s11432-016-5566-0

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Keywords

  • RRAM
  • ReRAM
  • resistive switching
  • crossbar
  • cross-point
  • storage class memory
  • 3D integration
  • atomic layer deposition
  • selector