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Development of two-dimensional materials for electronic applications



Since the first report of promising electrical properties of Molybdenum disulfide (MoS2) transistors in 2011, two-dimensional materials with unique properties have attracted great attention, and much research on their applications has been carried out. MoS2 and black phosphorus are excellent candidates for advanced applications in future electronics because of their tunable bandgap, high carrier mobility, and ultra-thin bodies. In this review, recent research trends in the application of molybdenum disulfide and black phosphorus to electronic devices are examined. We mainly address mobility improvements, dielectrics engineering, radio frequency applications, and low-frequency noise, all of which are crucial for the development of electronic and optoelectronic devices.


自从2011年基于单层硫化钼的晶体管成功制备开始,基于二维层状材料沟道的电子器件一直是国际学术界和工业界广泛关注的前沿热点,主要原因有两点:1.二维材料超薄体效应可以最大程度地抑制晶体管中的短沟道效应,在极限器件尺寸下,二维材料晶体管性能将有望超越硅基器件。2.二维材料具有高迁移率、能带可调控、各向异性等特点。本文介绍了近几年二硫化钼和黒磷的研究进展, 主要包括迁移率、高频器件、及低频噪声等方面的内容。

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Correspondence to Yanqing Wu.

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Li, X., Gao, T. & Wu, Y. Development of two-dimensional materials for electronic applications. Sci. China Inf. Sci. 59, 061405 (2016).

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  • two-dimensional materials
  • transistors
  • dielectrics
  • molybdenum disulfide
  • black phosphorus


  • 二维材料
  • 晶体管
  • 栅介质
  • 二硫化钼
  • 黒磷