A four-channel time-interleaved 30-GS/s 6-bit ADC in 0.18 μm SiGe BiCMOS technology

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Acknowledgements

This work was supported in part by National High Technology Research and Development Program of China (863 Program) (Grant No. 2013AA011201) and Wuhan Research Institute of Posts and Telecommunications (WRI). We would like to thank Dr. Jiang Fan from WRI for his technical support.

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Correspondence to Xinyu Liu.

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Zhu, X., Wu, D., Zhou, L. et al. A four-channel time-interleaved 30-GS/s 6-bit ADC in 0.18 μm SiGe BiCMOS technology. Sci. China Inf. Sci. 60, 129401 (2017). https://doi.org/10.1007/s11432-016-0711-y

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