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A four-channel time-interleaved 30-GS/s 6-bit ADC in 0.18 μm SiGe BiCMOS technology

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Acknowledgements

This work was supported in part by National High Technology Research and Development Program of China (863 Program) (Grant No. 2013AA011201) and Wuhan Research Institute of Posts and Telecommunications (WRI). We would like to thank Dr. Jiang Fan from WRI for his technical support.

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Authors and Affiliations

  1. Insititute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Xiaoge Zhu, Danyu Wu, Lei Zhou, Yinkun Huang, Jin Wu & Xinyu Liu

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Xiaoge Zhu

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  1. Xiaoge Zhu
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  2. Danyu Wu
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  3. Lei Zhou
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  4. Yinkun Huang
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  5. Jin Wu
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  6. Xinyu Liu
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Correspondence to Xinyu Liu.

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Zhu, X., Wu, D., Zhou, L. et al. A four-channel time-interleaved 30-GS/s 6-bit ADC in 0.18 μm SiGe BiCMOS technology. Sci. China Inf. Sci. 60, 129401 (2017). https://doi.org/10.1007/s11432-016-0711-y

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  • DOI: https://doi.org/10.1007/s11432-016-0711-y

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