Skip to main content
SpringerLink
Log in

Comparison of single-event upset generated by heavy ion and pulsed laser

  • Research Paper
  • Published:
Science China Information Sciences Aims and scope Submit manuscript

Abstract

Single-event upset (SEU) is investigated using heavy ion and pulsed laser. The measured SEU cross sections of D and DICE flip-flops are compared. Measurement results indicate pulsed laser is capable of inducing similar SEU to those induced by heavy ion. 3D-TCAD simulation is performed to investigate the factors to impact pulsed laser induced SEU. Simulation results show that the beam spot size significantly impacts SEU cross sections in both low and high laser energy while the variation of the equivalent LET only impacts SEU cross sections in the low laser energy.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Gasiot G, Glorieux M, Clerc S, et al. Experimental soft error rate of several flip-flop designs representative of production chip in 32 nm CMOS technology. IEEE Trans Nucl Sci, 2013, 60: 4226–4231

    Article  Google Scholar 

  2. Loveless T D, Jagannathan S, Reece S, et al. Neutron- and proton-induced single event upsets for D- and DICE flip-flop designs at a 40 nm technology node. IEEE Trans Nucl Sci, 2011, 58: 1008–1014

    Article  Google Scholar 

  3. Gaspard N J, Jagannathan S, Diggins Z J, et al. Technology scaling comparison of flip-flop heavy-ion single-event upset cross sections. IEEE Trans Nucl Sci, 2013, 60: 4368–4373

    Article  Google Scholar 

  4. Buchner S P, Miller F, Pouget V, et al. Pulsed-laser testing for single-event effects investigations. IEEE Trans Nucl Sci, 2013, 60: 1852–1857

    Article  Google Scholar 

  5. McMorrow D, Buchner S, Baze M, et al. Laser-induced latchup screening and mitigation in CMOS devices. IEEE Trans Nucl Sci, 2006, 53: 1819–1824

    Article  Google Scholar 

  6. Cavrois V, Paillet P, McMorrow D, et al. New insights into single event transient propagation in chains of invertersevidence for propagation-induced pulse broadening. IEEE Trans Nucl Sci, 2007, 54: 2338–2346

    Article  Google Scholar 

  7. Cavrois V, Paillet P, McMorrow D, et al. Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains. IEEE Trans Nucl Sci, 2008, 55: 2842–2853

    Article  Google Scholar 

  8. McMorrow D, Lotshaw W T, Melinger J S, et al. Three-dimensional mapping of single-event effects using two-photon absorption. IEEE Trans Nucl Sci, 2003, 50: 2199–2207

    Article  Google Scholar 

  9. Pouget V, Fouillat P, Lewis D, et al. An overview of the applications of a pulsed laser system for SEU testing. In: Proceedings of the 6th IEEE International On-Line Testing Workshop, Palma de Mallorca, 2000. 52–57

    Google Scholar 

  10. Champeix C, Borrel N, Dutertre J, et al. SEU sensitivity and modeling using picosecond pulsed laser stimulation of a D flip-flop in 40 nm CMOS technology. In: Proceedings of IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, Amherst, 2015. 177–182

    Google Scholar 

  11. Melinger J S, McMorrow D, Campbell A B, et al. Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth. J Appl Phys, 1998, 84: 690–699

    Article  Google Scholar 

  12. Douin A, Pouget V, Darracq F, et al. Influence of laser pulse duration in single event upset testing. IEEE Trans Nucl Sci, 2006, 53: 1799–1805

    Article  Google Scholar 

  13. Yu Y T, Han J W, Feng G Q, et al. Correction of single event latchup rate prediction using pulsed laser mapping test. IEEE Trans Nucl Sci, 2015, 62: 565–570

    Article  Google Scholar 

  14. Roy T, Witulski A F, Schrimpf R D, et al. Single event mechanisms in 90 nm triple-well CMOS devices. IEEE Trans Nucl Sci, 2008, 55: 2948–2956

    Article  Google Scholar 

  15. Liang B, Song R Q. Analyzing and mitigating the internal single-event transient in radiation hardened flip-flops at cir-cuit-level. Sci China Tech Sci, 2014, 57: 1–6

    Google Scholar 

  16. Song R Q, Chen S M, He Y B, et al. Flip-flops soft error rate evaluation approach considering internal single-event transient. Sci China Inf Sci, 2015, 58: 062403

    Article  Google Scholar 

  17. Song R Q, Chen S M, Du Y K, et al. PABAM: a physics-based analytical model to estimate bipolar amplification effect induced collected charge at circuit level. IEEE Trans Device Mater Rel, 2015, 15: 595–603

    Article  Google Scholar 

Download references

Acknowledgments

This work was supported by National Natural Science Foundation of China (Grant Nos. 61376109, 61434007). The authors would like to thank the HI-13 teams, the HIRFL teams and the SEEL teams for heavy ion and pulsed laser experiment supports.

Author information

Authors and Affiliations

  1. College of Computer, National University of Defense Technology, Changsha, 410073, China

    Bin Liang, Ruiqiang Song, Yaqing Chi, Chunmei Hu & Jianjun Chen

  2. Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing, 100080, China

    Jianwei Han, Rui Chen, Yingqi Ma & Shipeng Shangguan

Authors
  1. Bin Liang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Ruiqiang Song
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jianwei Han
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Yaqing Chi
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Rui Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Chunmei Hu
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Jianjun Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Yingqi Ma
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Shipeng Shangguan
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Bin Liang.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Liang, B., Song, R., Han, J. et al. Comparison of single-event upset generated by heavy ion and pulsed laser. Sci. China Inf. Sci. 60, 072401 (2017). https://doi.org/10.1007/s11432-016-0346-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s11432-016-0346-1

Keywords

Search

Navigation