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A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process

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The authors would like to thank the RF Circuit and System Lab of Hangzhou Dianzi University for the testing supports.

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Correspondence to Yan Han.

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The authors declare that they have no conflict of interest.

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Zhou, Q., Han, Y., Zhang, S. et al. A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process. Sci. China Inf. Sci. 60, 089401 (2017). https://doi.org/10.1007/s11432-016-0301-3

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