Abstract
In this paper, an effective and succinct radio-frequency (RF) grounding technique for class-AB power amplifier (PA) is presented. The proposed technique employs a grounding path, resonant with a capacitor in series at the center of the fundamental and second-order harmonic frequencies, between the critical ground nodes, to ensure a low impedance path. The power loss due to imperfect grounding is then reduced by 2 dB, and the saturated output power and power added efficiency (PAE) are therefore significantly improved. A fully integrated 5.8-GHz PA with the proposed technique is designed and implemented in a 65-nm CMOS process. Measured result shows a saturated output power of 25.4 dBm and a peak PAE of 29.7%, while with only 2.5 V of supply voltage.
摘要
创新点
创新点:本文使用了一种简明的版图技术, 使得版图上相距较远的射频接地点的阻抗较小, 实现了不同接地点之间的射频短路, 从而有效地提高了射频功率放大器的输出功率和效率。 此外, 本工作利用PCB上的寄生电感实现了RF扼流圈, 有效降低了高功率功放的直流在晶体管漏端所产生压降, 使得功放可以在2.5V电压下工作, 低于目前的主流水平。
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Acknowledgements
This work was supported by National High Technology Research and Development Program of China (863) (Grant No. 2015AA01A704), National Natural Science Foundation of China (Grants Nos. 61204026, 61331003), and Tsinghua University Initiative Scientific Research Program. The authors would like to thank Lorentz Solution for Peakview EM design and Keysight for measurement supports.
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Qin, C., Zhang, L., Zhang, L. et al. A 5.8 GHz class-AB power amplifier with 25.4 dBm saturation power and 29.7% PAE. Sci. China Inf. Sci. 60, 042403 (2017). https://doi.org/10.1007/s11432-016-0299-4
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DOI: https://doi.org/10.1007/s11432-016-0299-4