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A 5.8 GHz class-AB power amplifier with 25.4 dBm saturation power and 29.7% PAE

一种5.8GHz、可达25.4dBm饱和功率的AB类功率放大器

Abstract

In this paper, an effective and succinct radio-frequency (RF) grounding technique for class-AB power amplifier (PA) is presented. The proposed technique employs a grounding path, resonant with a capacitor in series at the center of the fundamental and second-order harmonic frequencies, between the critical ground nodes, to ensure a low impedance path. The power loss due to imperfect grounding is then reduced by 2 dB, and the saturated output power and power added efficiency (PAE) are therefore significantly improved. A fully integrated 5.8-GHz PA with the proposed technique is designed and implemented in a 65-nm CMOS process. Measured result shows a saturated output power of 25.4 dBm and a peak PAE of 29.7%, while with only 2.5 V of supply voltage.

摘要

创新点

创新点:本文使用了一种简明的版图技术, 使得版图上相距较远的射频接地点的阻抗较小, 实现了不同接地点之间的射频短路, 从而有效地提高了射频功率放大器的输出功率和效率。 此外, 本工作利用PCB上的寄生电感实现了RF扼流圈, 有效降低了高功率功放的直流在晶体管漏端所产生压降, 使得功放可以在2.5V电压下工作, 低于目前的主流水平。

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References

  1. 1.

    Kim W Y, Son H S, Kim J H, et al. A fully integrated triple-band CMOS class-E power amplifier with a power cell resizing technique and a multi-tap transformer. IEEE Microw Wirel Compon Lett, 2013, 23: 659–661

  2. 2.

    He M, Winoto R, Gao X, et al. A 40 nm dual-band 3-stream 802.11a/b/g/n/ac MIMO WLAN SoC with 1.1 Gb/s over-the-air throughput. In: Proceedings of IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), San Francisco, 2014. 350–351

  3. 3.

    Huang C W P, Antognetti P, Lam L, et al. A highly integrated dual-band SiGe power amplifier that enables 256QAM 802.11ac WLAN radio front-end designs. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Montreal, 2012. 225–228

  4. 4.

    Liu G, Haldi P, Liu T J K, et al. Fully integrated CMOS power amplifier with efficiency enhancement at power back-off. IEEE J Solid-State Circ, 2008, 43: 600–609

  5. 5.

    Chowdhury D, Hull C D, Degani O B, et al. A single-chip highly linear 2.4 GHz 30 dBm power amplifier in 90 nm CMOS. In: Proceedings of IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), San Francisco, 2009. 378–379

  6. 6.

    Kumar R, Krishnaswamy T, Rajendran G, et al. A fully integrated 2×2 b/g and 1×2 a-band MIMO WLAN SoC in 45 nm CMOS for multi-radio IC. In: Proceedings of IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), San Francisco, 2013. 328–329

  7. 7.

    Kousai S, Onizuka K, Yamaguchi T, et al. A 28.3 mW PA-closed loop for linearity and efficiency improvement integrated in a +27.1 dBm WCDMA CMOS power amplifier. In: Proceedings of IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), San Francisco, 2012. 84–86

  8. 8.

    Razavi B. RF Microelectronics. 2nd ed. Upper Saddle River: Prentice Hall, 2011

  9. 9.

    Afsahi A, Behzad A, Magoon V, et al. Fully integrated dual-band power amplifiers with on-chip baluns in 65 nm CMOS for an 802.11n MIMO WLAN SoC. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, Boston, 2009. 365–368

  10. 10.

    Lee C P, Behzad A, Marholev B, et al. A multistandard, multiband SoC with integrated BT, FM, WLAN radios and integrated power amplifier. In: Proceedings of IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), San Francisco, 2010. 454–455

  11. 11.

    Ye W, Ma K, Yeo K S. A 2-to-6 GHz Class-AB power amplifier with 28.4% PAE in 65 nm CMOS supporting 256QAM. In: Proceedings of IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), San Francisco, 2013. 1–3

Download references

Acknowledgements

This work was supported by National High Technology Research and Development Program of China (863) (Grant No. 2015AA01A704), National Natural Science Foundation of China (Grants Nos. 61204026, 61331003), and Tsinghua University Initiative Scientific Research Program. The authors would like to thank Lorentz Solution for Peakview EM design and Keysight for measurement supports.

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Correspondence to Lei Zhang.

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Qin, C., Zhang, L., Zhang, L. et al. A 5.8 GHz class-AB power amplifier with 25.4 dBm saturation power and 29.7% PAE. Sci. China Inf. Sci. 60, 042403 (2017). https://doi.org/10.1007/s11432-016-0299-4

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Keywords

  • power amplifier
  • class AB
  • high efficiency
  • fully integrated
  • CMOS

关键词

  • 功率放大器
  • AB类
  • 高效率
  • 全集成
  • CMOS