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A compact SCR model using advanced BJT models and standard SPICE elements

一种基于双极型晶体管的 SCR 集约模型

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摘要

创新点

基于双极型晶体管和标准SPICE器件提出了一种可控硅整流器 (SCR) 的集约模型。 为解决晶体管模型中弱击穿模型难以仿真过压击穿的问题, 在双极型晶体管基础上增加了基于电阻二极管组合的P-N结击穿模型, 实现了在无瞬态效应下SCR负阻特性的模拟; 考虑到寄生双极型晶体管集电极电流对SCR内部电阻的影响, 建立了阻值依赖SCR开启状态改变的可变电阻模型。 最后, 利用传输线脉冲测试和直流测试结果对模型有效性进行了验证。

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References

  1. 1

    Zhang P, Wang Y, Zhang X, et al. Novel siliconcontrolled rectifier (SCR) for digital and high-voltage ESD power supply clamp. Sci China Inf Sci, 2014, 57: 029401

  2. 2

    Mertens R, Rosenbaum E. A physics-based compact model for SCR devices used in ESD protection circuits. In: Proceedings of International Reliability Physics Symposium, Anaheim, 2013. 2B.2.1–2B.2.7

  3. 3

    Sarro J D, Rosenbaum E. A scalable SCR compact model for ESD circuit simulation. IEEE Trans Electron Dev, 2010, 57: 3275–3286

  4. 4

    Zhou Y, Connerney D, Carroll R, et al. Modeling MOS snapback for circuit-level ESD simulation using BSIM3 and VBIC models. In: Proceedings of IEEE International Symposium Quality Electronic Design (ISQED), San Jose, 2005. 476–481

  5. 5

    Zhou Y, Hajjar J J, Righter A W, et al. Modeling snapback of LVTSCR devices for ESD circuit simulation using advanced BJT and MOS models. In: Proceedings of Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), Anaheim, 2007. 3A.3-1–3A.3-10

  6. 6

    Toorn R V, Paaschens J, Kloosterman W. The MEXTRAM bipolar transistor model level 504.7. http://www.nxp.com/wcm documents/models. 2008

  7. 7

    Hajjar J. SPICE compatible models for circuit simulation of ESD events. IEEE Electron Device Society, Colloquium University of Central Florida, Orlando, 2012

  8. 8

    Maloney T J, Khurana N. Transmission line pulsing techniques for circuit modeling of ESD phenomena. In: Proceedings of Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), Minneapolis, 1985. 49–58

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Correspondence to Yuan Wang.

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The authors declare that they have no conflict of interest.

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Cao, J., Xu, J., Wang, Y. et al. A compact SCR model using advanced BJT models and standard SPICE elements. Sci. China Inf. Sci. 59, 109302 (2016). https://doi.org/10.1007/s11432-016-0072-3

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关键词

  • 可控硅整流器
  • 静电放电
  • 集约模型
  • 双极型晶体管
  • 传输线脉冲