Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer

  • 204 Accesses

  • 5 Citations

Abstract

A novel reduced surface field (RESURF) AlGaN/GaN high electron mobility transistor (HEMT) with charged buffer layer is proposed. Its breakdown mechanism and on-state characteristics are investigated. The HEMT features buried Fluorine ions in the GaN buffer layer both under the Drift and the Gate region (FDG). The section of FDG under the drift region (FD) not only reduces the electric field (E-field) peak at the gate edge but also enhances the E-field in the drift region by the assisted depletion, leading to a significant improvement in breakdown voltage (BV). Moreover, the section of FDG under the gate (FG) enhances the back barrier and effectively prevents electron injecting from the source to form leakage current, thus a higher BV is achieved. The BV of the proposed HEMT sharply increases to 750 V from 230 V of conventional AlGaN/GaN HEMT with the same dimensional parameters, and the specific on-resistance (Ron,sp) just increases to 1.21 mΩ·cm2 from 1.01 mΩ·cm2.

This is a preview of subscription content, log in to check access.

References

  1. 1

    Paul C T, Ritu T. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices. IEEE Trans Electron Dev, 1994, 41: 1481–1483

  2. 2

    Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys, 2000, 87: 334–343

  3. 3

    Wataru S, Ichiro O, Tsuneo O, et al. Theoretical limit estimation of lateral wide band-gap semiconductor powerswitching device. Solid-State Electron, 2004, 48: 1555–1562

  4. 4

    Duan B X, Yang Y T. Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs. Sci China Inf Sci, 2012, 55: 473–479

  5. 5

    Wei K, Liu X Y, He Z J, et al. DC chacteristics of AlGaN/GaN HEMTs with a field plate gate. J Semiconduct, 2008, 57: 1492–1496

  6. 6

    Eldad B T, Frank B, Oliver H, et al. AlGaN/GaN/GaN:C back-barrier HFETs with breakdown voltage of over 1 kV and low RON×A. IEEE Trans Electron Dev, 2010, 57: 3050–3058

  7. 7

    Eldad B T, Oliver H, Frank B, et al. Punchthrough-voltage enhancement of AlGaN/GaN HEMTs using AlGaN double-heterojunction confinement. IEEE Trans Electron Dev, 2008, 55: 3354–3359

  8. 8

    Zhao Z Q, Zhao Z Y, Luo Q, et al. High-voltage RESURF AlGaN/GaN high electron mobility transistor with back electrode. Electron Lett, 2013, 49: 1638–1640

  9. 9

    Zhou Q, Chen W J, Liu S H, et al. Schottky-contact technology in InAlN/GaN HEMTs for breakdown voltage improvement. IEEE Trans Electron Dev, 2013, 60: 1075–1081

  10. 10

    Klein P B, Binari S C, Ikossi K, et al. Current collapse and the role of carbon in AlGaNÕGaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy. Appl Phys Lett, 2001, 79: 3527–3529

  11. 11

    Cai Y, Zhou Y G, Chen K J, et al. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment. IEEE Electron Dev Lett, 2005, 26: 435–437

  12. 12

    Chen K J, Yuan L, Wang M J, et al. Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology. In: Electron Devices Meeting (IEDM), San Francisco, 2010. 465–468

  13. 13

    Song D, Liu J, Cheng Z, et al. Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse. IEEE Electron Dev Lett, 2007, 28: 189–191

  14. 14

    Young S K, Lim J Y, Seok O G, et al. High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD), San Diego, 2011. 251–255

  15. 15

    Wang M J, Chen K J. Improvement of the off-state breakdown voltage with fluorine ion implantation in AlGaN/GaN HEMTs. IEEE Trans Electron Dev, 2011, 58: 460–465

  16. 16

    Uren M J, Nash K J, Balmer R S, et al. Punch-through in short-channel AlGaN/GaN HFETs. IEEE Trans Electron Dev, 2006, 53: 395–398

  17. 17

    Stephan S, Axel E, Tommaso C, et al. TCAD methodology for simulation of GaN-HEMT power devices. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hawaii, 2014. 257–260

  18. 18

    Bougrov V, Levinshtein M E, Rumyantsev S L, et al. Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. New York: John Wiley & Sons, Inc. 2001. 1–30

  19. 19

    Huang W, Chow T P, Niiyama Y, et al. Lateral implanted RESURF GaN MOSFETs with BV up to 2.5 kV. In: Proceedings of the 20rd International Symposium on Power Semiconductor Devices & IC's (ISPSD), Orlando, 2008. 291–294

  20. 20

    Yuan L, Chen H W, Zhou Q, et al. A novel normally-off GaN power tunnel junction FET. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD), San Diego, 2011. 276–279

  21. 21

    Park B R, Lee J G, ChoiW, et al. High-quality ICPCVD SiO2for normally off AlGaN/GaN-on-Si recessed MOSHFETs. IEEE Electron Dev Lett, 2013, 34: 354–356

  22. 22

    Hilt O, Knauer A, Brunner F, et al. Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer. In: Proceedings of the 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hiroshima, 2011. 347–350

Download references

Author information

Correspondence to Xiaorong Luo.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Xiong, J., Yang, C., Wei, J. et al. Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer. Sci. China Inf. Sci. 59, 042410 (2016). https://doi.org/10.1007/s11432-015-5454-z

Download citation

Keywords

  • high voltage
  • power device
  • AlGaN/GaN HEMT
  • charged buffer
  • RESURF