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Electrical performance of static induction transistor with transverse structure

横向结构的静电感应晶体管电特性研究

Abstract

A novel static induction transistor with transverse surface gate structure was designed and successfully fabricated in this paper. Its basic electrical characteristics and frequency performance was investigated in depth. The optimum technological parameters such as source-gate space and epitaxial layer thickness for obtaining excellent frequency performance and high blocking voltage capacity were represented and discussed in detail. The main advantage of this work is that the performances of device were improved with simple structure and technological processes. The experimental and simulated results demonstrate the trans-conductance g m and gate-source breakdown voltage BV GS of the transverse type SIT increase from 60 to 87 ms and 20 to 26 V, respectively, in addition to obtaining higher than 100 MHz operating frequency under relatively simple technology processes compared with those of traditional vertical SIT.

创新点

提出了一种具有横向表面栅结构的静电感应晶体管。该晶体管将源、栅和漏极分布于硅片表面, 减小了栅-源之间的寄生电容, 利于提高器件的频率特性。通过优化包括栅-源间距及外延层厚度在内的工艺参数即可获得更高的栅效率及击穿特性。实验及模拟结果表明: 相对于传统的垂直沟道表面栅静电感应晶体管, 提出的横向结构静电感应晶体管采用相对简单结构及工艺实现较好的频率特性, 同时器件跨导、栅-源击穿电压得到明显提高。

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Correspondence to Chunjuan Liu.

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Liu, C., Wang, Y., Wang, Z. et al. Electrical performance of static induction transistor with transverse structure. Sci. China Inf. Sci. 60, 022402 (2017). https://doi.org/10.1007/s11432-015-1008-9

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Keywords

  • static induction transistor
  • surface gate
  • transverse structure
  • parasitical capacitance
  • gate-source breakdown voltage

关键词

  • 静电感应晶体管
  • 表面栅
  • 横向结构
  • 寄生电容
  • 栅-源击穿电压