Abstract
A CMOS terahertz (THz) detector implemented in a 180-nm standard CMOS process is proposed, and room-temperature detection of 0.94-THz radiation is demonstrated. The detector consists of an integrated on-chip patch antenna and a source-feeding NMOS transistor as the rectifying element. To improve the power transfer efficiency between the patch antenna and NMOS transistor, a novel short-stub matching network is proposed. An open quarter-wavelength microstrip transmission line connecting gate is proposed to eliminate the influence of the bonding wire and pad on the antenna-transistor impedance matching. Illuminated by a 0.94-THz BWO source, the measured voltage responsivity (R v) and noise equivalent power (NEP) of the detector are 31 V/W and 1.1 nW/Hz1/2, respectively.
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References
Federici J F, Schulkin B, Huang F, et al. THz imaging and sensing for security applications explosives, weapons and drugs. Semicond Sci Tech, 2005, 20: S266
Liu H B, Zhong H, Karpowicz N, et al. Terahertz spectroscopy and imaging for defense and security applications. Proc IEEE, 2007, 95: 1514–1527
Cooper K B, Dengler R J, Llombart N, et al. THz imaging radar for standoff personnel screening. IEEE Trans THz Sci Tech, 2011, 1: 169–182
Kawase K, Shibuya T, Hayashi S, et al. THz imaging techniques for nondestructive inspections. CR Phys, 2010, 11: 510–518
Ajito K, Ueno Y. THz chemical imaging for biological applications. IEEE Trans THz Sci Tech, 2011, 1: 293–300
de Maagt P, Bolivar P H, Mann C. Terahertz science, engineering and systems-from space to earth applications. Encyclopedia RF Microw Eng, 2005, in press. doi: 10.1002/0471654507.eme518
Yang Y, Mandehgar M, Grischkowsky D R. Broadband THz pulse transmission through the atmosphere. IEEE Trans THz Sci Tech, 2011, 1: 264–273
Kroug M, Cherednichenko S, Merkel H, et al. NbN hot electron bolometric mixers for terahertz receivers. IEEE Trans Appl Supercon, 2001, 11: 962–965
Wang J Q, Richards P L, Beeman J W, et al. Stressed photoconductive detector for far-infrared space applications. Appl Optics, 1987, 26: 4767–4771
Lü J Q, Shur M S. Terahertz detection by high-electron-mobility transistor: enhancement by drain bias. Appl Phys Lett, 2001, 78: 2587–2588
Sun J D, Sun Y F, Wu D M, et al. High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor. Appl Phys Lett, 2012, 100: 013506
Dyakonov M, Shur M. Shallow water analogy for a ballistic field effect transistor: new mechanism of plasma wave generation by dc current. Phys Rev Lett, 1993, 71: 2465
Dyakonov M, Shur M. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid. IEEE Trans Electron Dev, 1996, 43: 380–387
Knap W, Teppe F, Meziani Y, et al. Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors. Appl Phys Lett, 2004, 85: 675–677
Al Hadi R, Sherry H, Grzyb J, et al. A broadband 0.6 to 1 THz CMOS imaging detector with an integrated lens. In: Proceedings of IEEE MTT-S International Microwave Symposium Digest (MTT), Baltimore, 2011. 1–4
Al Hadi R, Sherry H, Grzyb J, et al. A 1 k-pixel video camera for 0.7-1.1 terahertz imaging applications in 65-nm CMOS. IEEE J Solid-St Circ, 2012, 47: 2999–3012
Han R, Zhang Y, Coquillat D, et al. A 280-GHz Schottky diode detector in 130-nm digital CMOS. IEEE J Solid-St Circ, 2011, 46: 2602–2612
Han R, Zhang Y, Kim Y, et al. 280 GHz and 860 GHz image sensors using Schottky-barrier diodes in 0.13 m digital CMOS. In: Proceedings of IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), San Francisco, 2012. 254–256
Sze S M, Ng K K. Physics of Semiconductor Devices. Hoboken: John Wiley & Sons, 2006
Ojefors E, Pfeiffer U R, Lisauskas A, et al. A 0.65 THz focal-plane array in a quarter-micron CMOS process technology. IEEE J Solid-St Circ, 2009, 44: 1968–1976
Sentaurus Device User Guide, Ver. D-2010.03, Synopsis Inc., Mountain View, CA, Mar. 2010
Kraus J D, Marhefka R J. Antenna for all Applications. Upper Saddle River: McGraw Hill, 2002
Pozar D M. Microwave Engineering. Hoboken: John Wiley & Sons, 2009
Liu Z Y, Liu L Y, Wu N J. Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process. In: Proceedings of ISPDI 5th International Symposium on Photoelectronic Detection and Imaging, Beijing, 2013. 89091E
Pfeiffer U R, Ojefors E. A 600-GHz CMOS focal-plane array for terahertz imaging applications. In: Proceedings of the 34th European Solid-State Circuits Conference, Edinburgh, 2008. 110–113
Ojefors E, Baktash N, Zhao Y, et al. Terahertz imaging detectors in a 65-nm CMOS SOI technology. In: Proceedings of European Solid-State Circuits Conference, Sevilla, 2010. 486–489
OAD-7 Golay Detector Operating Manual, QMC Instruments Ltd., Cardiff, U.K., Jan. 4, 2005
Acknowledgements
This work was supported by National Key Research and Development Program of China (Grant No. 2016YFA0202202), National Natural Science Foundation of China (Grant Nos. 61474108, 61331003), Beijing Natural Science Foundation (Grant No. 4152051), and Chinese Academy of Sciences. The authors are grateful to Prof. H. Qin and Dr. J. D. Sun of Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, for the measurement support.
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Liu, Z., Liu, L., Zhang, Z. et al. Terahertz detector for imaging in 180-nm standard CMOS process. Sci. China Inf. Sci. 60, 082401 (2017). https://doi.org/10.1007/s11432-015-0976-9
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DOI: https://doi.org/10.1007/s11432-015-0976-9