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Switching performances of static induction thyristor with buried-gate structure

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Abstract

The switching characteristics of SITh are not only determined by the conductance modulation in channel between the gate regions, but also affected by the external gate driving circuit. The physical mechanism and behavior of switching process are studied deeply based on the fabrication practice of SITh. The dependence of switching performances of SITh on material, geometric structure and technological parameters are analytically discussed by using two-dimensional dynamical model firstly proposed in this paper. A series of optimum matching technological approaches have been developed for improving the switching characteristics of SITh. A versatile testing circuit is designed to get more accurate switching parameters and more stable switching-off process with lower power consumptions. The switching times t on and t off are reduced from 0.2 μs and 1.2 μs to 0.08 μs and 1.0 μs, respectively, and the dynamic dv/dt value of more than 1000 V/μs at switching-off is obtained.

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Authors and Affiliations

  1. College of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, China

    ChunJuan Liu

  2. Institute of Microelectronics, School of Physical Science & Technology, Lanzhou University, Lanzhou, 730000, China

    ChunJuan Liu, Su Liu & YaJie Bai

Authors
  1. ChunJuan Liu
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  2. Su Liu
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  3. YaJie Bai
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Correspondence to Su Liu.

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Liu, C., Liu, S. & Bai, Y. Switching performances of static induction thyristor with buried-gate structure. Sci. China Inf. Sci. 57, 1–8 (2014). https://doi.org/10.1007/s11432-013-4955-x

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  • DOI: https://doi.org/10.1007/s11432-013-4955-x

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