Abstract
This paper demonstrates that the depletion process for AlGaN/GaN high electron mobility transistors (HEMTs) is different than that for silicon power devices by analyzing active region depletion. Based on the special breakdown principle that occurs in AlGaN/GaN HEMTs, we propose a new reduced surface field AlGaN/GaN HEMT with a double low-density drain (LDD) and a positively charged region near the drain to optimize the surface electric field and increase the breakdown voltage. In this structure, two negative charge regions with different doses are introduced into the polarization AlGaN layer to form a double LDD and decrease the high electric field near the gate by depleting two-dimensional electron gas. A positively charged region is added to the electrode near the drain to decrease the high electric field peak at the drain edge. By applying ISE (integrated systems engineering) simulation software, we verify that the virtual gate effect occurs in the AlGaN/GaN HEMTs. The breakdown voltage is improved from 257 V in the conventional structure to 550 V in the proposed structure.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Cai Y, Zhou Y G, Chen K J, et al. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment. IEEE Electr Device L, 2005, 26: 435–437
Song D, Liu J, Cheng Z Q, et al. Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse. IEEE Electr Device L, 2007, 28: 189–191
Ando Y, Okamoto Y, Miyamoto H, et al. 10-W/mm AlGaN-GaN HFET with a field modulating plate. IEEE Electr Device L, 2003, 24: 289–291
Wu Y F Saxler A, Moore M et al. 30-W/mm GaN HEMTs by field plate optimization. IEEE Electr Device L, 2004, 25: 117–119
Chiu H C, Cheng C S, Shih Y J. Power and linearity comparisons of gate and source terminated field-plate pseudomorphic HEMTs Semicond. Sci Technol, 2005, 20: 1183–1187
Tipirneni N, Koudymov A, Adivarahan V, et al The 1.6-kV AlGaN/GaN HFETs. IEEE Electr Device L, 2006, 27: 716–718
Bouya M, Malbert N, Labat N, et al. Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectron Reliab, 2008, 48: 1366–1369
Bardwell J A, Haffouz S, McKinnon W R, et al. The effect of surface cleaning on current collapse in AlGaN/GaN HEMTs. Electrochem Solid S, 2007, 10: H46–H49
Arulkumaran S, Liu Z H, Ng G I, et al. Temperature dependent microwave performance of AlGaN/GaN HEMTs on high-resistivity silicon substrate. Thin Solid Films, 2007, 515: 4517
Arulkumaran S, Egawa T, Ishikawa H, et al. Temperature dependence of gate-leakage current in AlGaN/GaN highelectron-mobility transistors. Appl Phys Lett, 2003, 82: 3110–3112
Chen X B, Johnny K O S. Optimization of the specific on-resistance of the COOLMOSTM. IEEE Trans Electron Dev, 2001, 48: 344–348
Sameh G, Nassif K, Salama C A T. Super-junction LDMOST on a silicon-on-sapphire substrate. IEEE Trans Electron Dev, 2003, 50: 1385–1391
Duan B X, Zhang B, Li Z J. New thin-film power MOSFET’s with a buried oxide double step structure. IEEE Electr Device L, 2006, 27: 377–379
Duan B X, Yang Y T, Zhang B, et al. Folded accumulation LDMOST (FALDMOST): new power MOS transistor with very low specific on-resistance. IEEE Electr Device L, 2009, 12: 1329–1331
Duan B X, Yang Y T. Low specific on-resistance power MOS transistor with multi-layer carrier accumulation breaks the limit line of silicon. IEEE Trans Electron Dev, 2011, 58: 2057–2060
Ishida H, Shibata D, Yanagihara M, et al. Unlimited high breakdown voltage by natural super junction of polarized semiconductor. IEEE Electr Device L, 2008, 29: 1087–1089
Duan B X, Yang Y T, Zhang B. New super junction LDMOS with N-Type charges compensation layer. IEEE Electr Device L, 2009, 30: 305–307
Duan B X, Yang Y T, Zhang B. High voltage REBULF LDMOS with N+buried layer. Solid-State Electron, 2010, 54: 685–688
Karmalkar S, Deng J Y, Shur M S. RESURF AlGaN/GaN HEMT for high voltage power switching. IEEE Electr Device L, 2001, 22: 373–375
Saito W, Kuraguchi M, Takada Y, et al. Influence of surface defect charge at AlGaN/GaN/HEMT upon schottky gate leakage current and breakdown voltage. IEEE Trans Electron Dev, 2005, 52: 159–164
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Duan, B., Yang, Y. Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs. Sci. China Inf. Sci. 55, 473–479 (2012). https://doi.org/10.1007/s11432-011-4496-0
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11432-011-4496-0