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Strain coefficient measurement for the (100) uniaxial strain silicon by Raman spectroscopy

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Abstract

The lattice vibration model is established to express the crystalline silicon strain, based on which the strain coefficient b of −336.6 cm−1 is obtained for the uniaxial strain silicon with (100) crystalline plane. Applying Raman spectroscopy to measure single-axis crystalline silicon, the relationship between the screw rotation amount and the strain is advanced. By using a laser with a 648 nm wavelength, the Raman spectra frequency shift of 0.47 cm−1 is measured when the screw rotation amount is 1.5 mm. The strain coefficient b of −335.7 cm−1, obtained for the (100) uniaxial strain silicon, agrees with the result of the lattice vibration model.

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References

  1. Moore G E. Cramming more components onto integrated circuits. Electronics, 1965, 38: 114–117

    Google Scholar 

  2. Wilk G D, Wallace R M, Anthony J M. High-K gate dielectrics: Current status and materials properties considerations. J Appl Phys, 2001, 89: 5243–5275

    Article  Google Scholar 

  3. Ren C, Yu H Y, Kang J F, et al. Fermi-level pinning induced thermal instability in the effective work function of TaN in TaN/SiO2 gate stack. IEEE Electron Device Lett, 2004, 25: 123–125

    Article  Google Scholar 

  4. Yeo Y C, Qiang L, Pushkar R, et al. Dual-metal gate CMOS technology with ultra-thin silicon nitride gate dielectric. IEEE Electron Device Lett, 2001, 22: 227–229

    Article  Google Scholar 

  5. Misra V, Lucovsky G, Parsons G. Issues in high-k gate stack interfaces. MRS Bull, 2001, 27: 212–216

    Article  Google Scholar 

  6. Yang Y J, Ho WS, Huang C F. Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors. Appl Phys Lett, 2007, 91: 102–103

    Google Scholar 

  7. Scott E T, Chis A, Mohsen A, et al. A 90-nm logic technology featuring strained-silicon. IEEE Trans Electron Dev, 2004, 51: 1790–1797

    Article  Google Scholar 

  8. Weng S S. Recent development in nano-device. Micronanoelectron Technol, 2005, 42: 90–94

    Google Scholar 

  9. Duan B X, Zhang B, Li Z J. A new partial SOI power device structure with P-type buried layer. Solid State Electron, 2005, 4: 1965–1968

    Article  Google Scholar 

  10. Duan B X, Zhang B, Li Z J. New thin-film power MOSFETs with a buried oxide double step structure. IEEE Electron Device Lett, 2006, 27: 377–339

    Article  Google Scholar 

  11. Balslev I. Influence of uniaxial stress on the indirect absorption edge in silicon and germanium. Phys Rev, 1966, 143: 636–647

    Article  Google Scholar 

  12. Ingrid D W, Maes H E, Stephen K J. Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment. J Appl Phys, 1996, 79: 7148–7156

    Article  Google Scholar 

  13. Hoyt J L, Nayfeh H M, Eguchi S, et al. Strained Si MOSFET technology. In: Proceedings of the International Electron Devices Meeting Technical Digest, San Francisco, CA, USA, 2002. 23–26

  14. Lochtefeld A, Antoniadis D A. Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress. IEEE Electron Device Lett, 2001, 22: 591–593

    Article  Google Scholar 

  15. Jenkins K A, Rim K. Measurement of the effect of self-heating in strained-silicon MOSFETs. IEEE Electron Device Lett, 2002, 23: 360–362

    Article  Google Scholar 

  16. Shih J R, Kenneth W. Reliability considerations of strained silicon on relaxed silicon-germanium (SiGe) substrate. In: IEEE 43rd Annual International Reliability Physics Symposium, San Jose, CA, USA, 2005. 403

  17. Chandrasekhar M, Renucci J B, Cardona M. Effects of interband excitations on Raman phonons in heavily doped n-Si. Phys Rev B, 1978, 17: 1623–1633

    Article  Google Scholar 

  18. Komai K, Minoshima K, Tawara H, et al. Development of mechanical testing machine for microelements and fracture strength evaluation of single-crystalline silicon microelements. Trans Japan Soc Mech Eng Series, 1994, A60: 52–58

    Article  Google Scholar 

  19. Temple P A, Hathaway C E. Multi-phonon Raman spectrum of silicon. Phys Rev B, 1973, 7: 3685–3697

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, 710071, China

    BaoXing Duan & YinTang Yang

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  1. BaoXing Duan
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  2. YinTang Yang
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Correspondence to BaoXing Duan.

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Duan, B., Yang, Y. Strain coefficient measurement for the (100) uniaxial strain silicon by Raman spectroscopy. Sci. China Inf. Sci. 54, 1762–1768 (2011). https://doi.org/10.1007/s11432-011-4180-4

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  • DOI: https://doi.org/10.1007/s11432-011-4180-4

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