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High-efficiency resistive switch and artificial synaptic simulation in antimony-based perovskite devices

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Abstract

Three kinds of Cs3Sb2X9 (X=I, Br, Cl) perovskite films have been prepared to fabricate the resistive memory devices with the structure of Al/Cs3Sb2X9 (X=I, Br, Cl)/indium tin oxide (ITO) glass. All devices exhibited a bipolar resistive switching behavior at room temperature by applying scanning voltage of 0 → 1 → 0→ −1.8 → 0 V. The switching voltages in the Al/Cs3Sb2X9 (X=I, Br, Cl)/ITO devices gradually decreased with the X from I, Br to Cl due to the different migration rates of halide vacancy in perovskite films, which is confirmed by the first-principles calculations of activation energy. The ON/OFF ratio under the reading voltage of 0.1 V significantly increased up to 100 in the Al/Cs3Sb2Cl9/ITO device, which is nearly 10 and 3 times larger than that of the Al/Cs3Sb2I9/ITO device and the Al/Cs3Sb2Br9/ITO device, respectively. The endurance cycles and retention time of current devices were evaluated, showing the excellent electrical stability. Importantly, the three kinds of Al/Cs3Sb2X9 (X=I, Br, Cl)/ITO device can successfully simulate the short-term plasticity of biological synapse. The Al/Cs3Sb2Cl9/ITO device showed the highest paired-pulsed facilitation index compared with that of other two devices, which was explored for the long-term plasticity and learning experience processes of synapse. In addition, the Al/Cs3Sb2Cl9/ITO device established associative learning behavior by simulating the Pavlov’s dog experiment.

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Authors and Affiliations

  1. Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang, 110819, China

    FeiFei Luo, YanZhao Wu, DaKe Xu, GaoWu Qin & XianMin Zhang

  2. Department of Physics, Freie Universität Berlin, 14195, Berlin, Germany

    JunWei Tong

  3. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China

    FuBo Tian

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  1. FeiFei Luo
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  2. YanZhao Wu
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Correspondence to XianMin Zhang.

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The supporting information is available online at tech.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

This work was supported by the National Natural Science Foundation of China (Grant Nos. 51971057 and 52271238), the Liaoning Revitalization Talents Program (Grant No. XLYC2002075), and the Research Funds for the Central University (Grant Nos. N2202004 and N2102012).

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Luo, F., Wu, Y., Tong, J. et al. High-efficiency resistive switch and artificial synaptic simulation in antimony-based perovskite devices. Sci. China Technol. Sci. 66, 1141–1151 (2023). https://doi.org/10.1007/s11431-022-2309-1

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