Skip to main content
SpringerLink
Log in

Subsurface damage and bending strength analysis for ultra-thin and flexible silicon chips

  • Article
  • Published:
Science China Technological Sciences Aims and scope Submit manuscript

Abstract

Subsurface damage (SSD) is an unavoidable problem in the precision mechanical grinding for preparing ultra-thin and flexible silicon chips. At present, there are relatively few studies on the relationship between SSD and the bending strength of ultra-thin chips under different grinding parameters. In this study, SSD including amorphization and dislocation is observed using a transmission electron microscope. Theoretical predictions of the SSD depth induced by different processing parameters are in good agreement with experimental data. The main reasons for SSD depth increase include the increase of grit size, the acceleration of feed rate, and the slowdown of wheel rotation speed. Three-point bending test is adopted to measure the bending strength of ultra-thin chips processed by different grinding conditions. The results show that increasing wheel rotation speed and decreasing grit size and feed rate will improve the bending strength of chips, due to the reduction of SSD depth. Wet etching and chemical mechanical polishing (CMP) are applied respectively to remove the SSD induced by grinding, and both contribute to providing a higher bending strength, but in comparison, CMP works better due to a smooth surface profile. This research aims to provide some guidance for optimizing the grinding process and fabricating ultra-thin chips with higher bending strength.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Chen Y, Liu F, Lu B, et al. Skin-like hybrid integrated circuits conformal to face for continuous respiratory monitoring. Adv Electron Mater, 2020, 6: 2000145

    Article  Google Scholar 

  2. Chen Y, Zhang Y, Liang Z, et al. Flexible inorganic bioelectronics. Npj Flex Electron, 2020, 4: 1

    Article  Google Scholar 

  3. Jin P, Fu J, Wang F, et al. A flexible, stretchable system for simultaneous acoustic energy transfer and communication. Sci Adv, 2021, 7: 2507

    Article  Google Scholar 

  4. Burghartz J N, Appel W, Harendt C, et al. Ultra-thin chip technology and applications, a new paradigm in silicon technology. Solid-State Electron, 2010, 54: 818–829

    Article  Google Scholar 

  5. Gupta S, Navaraj W T, Lorenzelli L, et al. Ultra-thin chips for high-performance flexible electronics. npj Flex Electron, 2018, 2: 8

    Article  Google Scholar 

  6. Ma Y, Zhang Y, Cai S, et al. Flexible hybrid electronics for digital healthcare. Adv Mater, 2020, 32: 1902062

    Article  Google Scholar 

  7. Vandeperre L J, Giuliani F, Lloyd S J, et al. The hardness of silicon and germanium. Acta Mater, 2007, 55: 6307–6315

    Article  Google Scholar 

  8. Wortman J J, Evans R A. Young’s modulus, shear modulus, and Poisson’s ratio in silicon and germanium. J Appl Phys, 1965, 36: 153–156

    Article  Google Scholar 

  9. Yamaguchi H, Tatami J, Yahagi T, et al. Dislocation-controlled microscopic mechanical phenomena in single crystal silicon under bending stress at room temperature. J Mater Sci, 2020, 55: 7359–7372

    Article  Google Scholar 

  10. Qin F, Zhang L, Chen P, et al. In situ wireless measurement of grinding force in silicon wafer self-rotating grinding process. Mech Syst Signal Process, 2021, 154: 107550

    Article  Google Scholar 

  11. Delmdahl R, Pätzel R, Brune J. Large-area laser-lift-off processing in microelectronics. Phys Procedia, 2013, 41: 241–248

    Article  Google Scholar 

  12. Wang C, Linghu C, Nie S, et al. Programmable and scalable transfer printing with high reliability and efficiency for flexible inorganic electronics. Sci Adv, 2020, 6: 2393

    Article  Google Scholar 

  13. Sevilla G A T, Inayat S B, Rojas J P, et al. Flexible and semi-transparent thermoelectric energy harvesters from low cost bulk silicon (100). Small, 2013, 9: 3916–3921

    Article  Google Scholar 

  14. Burghartz J N. Silicon-on-insulator (SOI) wafer-based thin-chip fabrication. In: Burghartz J, ed. Ultra-thin Chip Technology and Applications. New York: Springer, 2011. 61–67

    Chapter  Google Scholar 

  15. Burghartz J N. You can’t be too thin or too flexible. IEEE Spectr, 2013, 50: 38–61

    Article  Google Scholar 

  16. Du D, Wu Y, Zhao Y, et al. Deformation and fracture behaviours of a YAG single crystal characterized using nanoindentation method. Mater Charact, 2020, 164: 110302

    Article  Google Scholar 

  17. Huang H, Li X, Mu D, et al. Science and art of ductile grinding of brittle solids. Int J Machine Tools Manuf, 2021, 161: 103675

    Article  Google Scholar 

  18. Lawn B R, Borrero-Lopez O, Huang H, et al. Micromechanics of machining and wear in hard and brittle materials. J Am Ceram Soc, 2021, 104: 5–22

    Article  Google Scholar 

  19. Li C, Wu Y, Li X, et al. Deformation characteristics and surface generation modelling of crack-free grinding of GGG single crystals. J Mater Process Tech, 2020, 279: 116577

    Article  Google Scholar 

  20. Zhou P, Yan Y, Huang N, et al. Residual stress distribution in silicon wafers machined by rotational grinding. J Manuf Sci Eng, 2017, 139: 081012

    Article  Google Scholar 

  21. Gao S, Dong Z, Kang R, et al. Warping of silicon wafers subjected to back-grinding process. Precis Eng, 2015, 40: 87–93

    Article  Google Scholar 

  22. Marshall D B, Lawn B R, Evans A G. Elastic/plastic indentation damage in ceramics: The lateral crack system. J Am Ceramic Soc, 1982, 65: 561–566

    Article  Google Scholar 

  23. Wu C, Li B, Liu Y, et al. Strain rate-sensitive analysis for grinding damage of brittle materials. Int J Adv Manuf Technol, 2016, 89: 2221–2229

    Article  Google Scholar 

  24. Yao Z, Gu W, Li K. Relationship between surface roughness and subsurface crack depth during grinding of optical glass BK7. J Mater Process Tech, 2012, 212: 969–976

    Article  Google Scholar 

  25. Yin J, Bai Q, Goel S, et al. An analytical model to predict the depth of sub-surface damage for grinding of brittle materials. CIRP J Manuf Sci Tech, 2021, 33: 454–464

    Article  Google Scholar 

  26. Zhang L, Chen P, An T, et al. Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process. Curr Appl Phys, 2019, 19: 570–581

    Article  Google Scholar 

  27. Fang X, Bishara H, Ding K, et al. Nanoindentation pop-in in oxides at room temperature: Dislocation activation or crack formation? J Am Ceram Soc, 2021, 104: 4728–4741

    Article  Google Scholar 

  28. Zhao J H, Tellkamp J, Gupta V, et al. Experimental evaluations of the strength of silicon die by 3-point-bend versus ball-on-ring tests. IEEE Trans Electron Packag Manuf, 2009, 32: 248–255

    Article  Google Scholar 

  29. Liu Z, Huang Y A, Xiao L, et al. Nonlinear characteristics in fracture strength test of ultrathin silicon die. Semicond Sci Technol, 2015, 30: 045005

    Article  Google Scholar 

  30. Jeon E B, Park J D, Song J H, et al. Bi-axial fracture strength characteristic of an ultra-thin flash memory chip. J Micromech Microeng, 2012, 22: 105014

    Article  Google Scholar 

  31. McLellan N, Fan N, Liu S, et al. Effects of wafer thinning condition on the roughness, morphology and fracture strength of silicon die. J Electron Packag, 2004, 126: 110–114

    Article  Google Scholar 

  32. Liu T, Ge P, Bi W, et al. Fracture strength of silicon wafers sawn by fixed diamond wire saw. Sol Energy, 2017, 157: 427–433

    Article  Google Scholar 

  33. Wu J D, Huang C Y, Liao C C. Fracture strength characterization and failure analysis of silicon dies. Microelectron Reliab, 2003, 43: 269–277

    Article  Google Scholar 

  34. Yang C, Mess F, Skenes K, et al. On the residual stress and fracture strength of crystalline silicon wafers. Appl Phys Lett, 2013, 102: 021909

    Article  Google Scholar 

  35. Sun J, Qin F, Chen P, et al. A predictive model of grinding force in silicon wafer self-rotating grinding. Int J Mach Tools Manuf, 2016, 109: 74–86

    Article  Google Scholar 

  36. Jing X, Maiti S, Subhash G. A new analytical model for estimation of scratch-induced damage in brittle solids. J Am Ceram Soc, 2007, 90: 885–892

    Article  Google Scholar 

  37. Hu J Z, Merkle L D, Menoni C S, et al. Crystal data for high-pressure phases of silicon. Phys Rev B, 1986, 34: 4679–4684

    Article  Google Scholar 

  38. Uchic M D, Dimiduk D M, Florando J N, et al. Sample dimensions influence strength and crystal plasticity. Science, 2004, 305: 986–989

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Key Laboratory of Applied Mechanics of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, China

    Wei Jian, Peng Jin, LongJi Zhu & Xue Feng

  2. Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China

    Wei Jian, Peng Jin, LongJi Zhu & Xue Feng

  3. Institute of Flexible Electronics Technology of Tsinghua University Jiaxing, Jiaxing, 314000, China

    ZhaoXian Wang, LongJi Zhu & Ying Chen

  4. Qiantang Science and Technology Innovation Center, Hangzhou, 310016, China

    ZhaoXian Wang & Ying Chen

Authors
  1. Wei Jian
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. ZhaoXian Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Peng Jin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. LongJi Zhu
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Ying Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Xue Feng
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to Ying Chen or Xue Feng.

Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. U20A6001, 11625207, 11902292, and 11921002), and the Zhejiang Province Key Research and Development Project (Grant Nos. 2019C05002, 2020C05004, and 2021C01183).

Supporting Information The supporting information is available online at https://tech.scichina.com and https://link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

Supplementary Information

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Jian, W., Wang, Z., Jin, P. et al. Subsurface damage and bending strength analysis for ultra-thin and flexible silicon chips. Sci. China Technol. Sci. 66, 215–222 (2023). https://doi.org/10.1007/s11431-021-2021-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11431-021-2021-4

Keywords

Search

Navigation