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Memristor initial-boosted coexisting plane bifurcations and its extreme multi-stability reconstitution in two-memristor-based dynamical system

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Abstract

Initial-dependent extreme multi-stability and offset-boosted coexisting attractors have been significantly concerned recently. This paper constructs a novel five-dimensional (5-D) two-memristor-based dynamical system by introducing two memristors with cosine memductance into a three-dimensional (3-D) linear autonomous dissipative system. Through theoretical analyses and numerical plots, the memristor initial-boosted coexisting plane bifurcations are found and the memristor initial-dependent extreme multi-stability is revealed in such a two-memristor-based dynamical system with plane equilibrium. Furthermore, a dimensionality reduction model with the determined equilibrium is established via an integral transformation method, upon which the memristor initial-dependent extreme multi-stability is reconstituted theoretically and expounded numerically Finally, physically circuit-implemented PSIM (power simulation) simulations are carried out to validate the plane offset-boosted coexisting behaviors.

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Authors and Affiliations

  1. School of Information Science and Engineering, Changzhou University, Changzhou, 213164, China

    Han Bao, Mo Chen, HuaGan Wu & BoCheng Bao

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  1. Han Bao
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  2. Mo Chen
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  3. HuaGan Wu
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  4. BoCheng Bao
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Correspondence to BoCheng Bao.

Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. 51777016, 51607013, 61601062 & 61801054).

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Bao, H., Chen, M., Wu, H. et al. Memristor initial-boosted coexisting plane bifurcations and its extreme multi-stability reconstitution in two-memristor-based dynamical system. Sci. China Technol. Sci. 63, 603–613 (2020). https://doi.org/10.1007/s11431-019-1450-6

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