Abstract
The silicon-based diodes coated with a thin film of neutron reactive materials have been shown to produce excellent neutron detectors. We have fabricated the thin-film-coated single Si-PIN neutron detectors and stacked ones coupled in series and parallel in this work. The stacked detectors show the advantage of improving the detection efficiency of neutron detecting, which essentially attributes to the increase of the effective detection area. It is shown that the stacked detector in series has more superior performance than the parallel one. This work provides a feasible method to develop solid-state semiconductor neutron detectors with high neutron detection efficiency and high response speed.
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Nelson K A, Bellinger S L, Montag B W, et al. Investigation of a lithium foil multi-wire proportional counter for potential 3He replacement. Nucl Instr Meth A, 2012, 669: 79–84
Kouzes R L. Pacific Northwest National Laboratory Report PNNL-18388. 2009
McGregor D S, Klannv R T, Gersch H K, et al. Thin-film-coated bulk GaAs detectors for thermal and fast neutron measurements. Nucl Instr Meth A, 2001, 466: 126–141
Schieber M, Zuck A, Marom G, et al. Composite polycrystalline semiconductor neutron detectors. Nucl Instr Meth A, 2007, 579: 180–183
McGregor D S, Klann R T, Sanders J D, et al. Recent results from thin-film-coated semiconductor neutron detectors. P SPIE, 2002, 4784: 164–182
McGregor D S, Hammig M D, Gersch H K, et al. Design considerations for thin film coated semiconductor thermal neutron detectors-I: Basics regarding alpha particle emitting neutron reactive films. Nucl Instr Meth A, 2003, 500: 272–308
Bellinger S L, Fronk R G, Sobering T J, et al. Characteristics of the large-area stacked microstructured semiconductor neutron detector. P SPIE, 2012, 8373: 837301
Wang Z H, Morris C L. Multi-layer boron thin-film detectors for neutrons. Nucl Instr Meth A, 2011, 652: 323–325.
Brar B, Wilk G D, Seabaugh A C. Direct extraction of the electron tunneling effective mass in ultrathin SiO2. Appl Phys Lett, 1996, 69: 2728–2730
Sze S M. Physics of Semiconductor Devices. 3rd eds. Xi’an: Xi’an Jiaotong University Press, 2008. 69
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Gao, X., Li, F., Lu, M. et al. Characteristics of Si-PIN nuclear radiation detectors stacked in series and parallel. Sci. China Technol. Sci. 58, 1091–1095 (2015). https://doi.org/10.1007/s11431-015-5802-7
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DOI: https://doi.org/10.1007/s11431-015-5802-7