Abstract
During the ultra large scale integration (ULSI) process, the surface roughness of the polished silicon wafer plays an important role in the quality and rate of production of devices. In this work, the effects of oxidizer, surfactant, polyurethane pad and slurry additives on the surface roughness and topography of chemical-mechanical planarization (CMP) for silicon have been investigated. A standard atomic force microscopy (AFM) test method for the atomic scale smooth surface was proposed and used to measure the polished silicon surfaces. Finally, compared with the theoretical calculated R a value of 0.0276 nm, a near-perfect silicon surface with the surface roughness at an atomic scale (0.5 Å) was achieved based on an optimized CMP process.
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Eeferences
Pietsch G J, Chabal Y J, Higashi G S. The atomic-scale removal mechanism during chemo-mechanical polishing of Si(100) and Si(111). Surf Sci, 1995, 331–333: 395–401
Mullany B, Byrne G. The effect of slurry viscosity on chemical-mechanical polishing of silicon wafers. J Mater Process Technol, 2003, 132: 28–34
Liu Y L, Zhang K L, Wang F, et al. Investigation on the final polishing slurry and technique of silicon substrate in ULSI. Microelectron Eng, 2003, 66: 438–444
Xie Y S, Bhushan B. Effects of particle size, polishing pad and contact pressure in free abrasive polishing. Wear, 1996, 200: 281–295
Xu J, Luo J B, Wang L L, et al. The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing. Tribol Int, 2007, 40: 285–289
Si L N, Guo D, Luo J B, et al. Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study. J Appl Phys, 2010, 107: 064310
Xu J, Luo J B, Lu X C, et al. Atomic scale deformation in the solid surface induced by nanoparticle impacts. Nanotechnology, 2005, 16: 859–864
Xu X F, Luo J B, Lu X C, et al. Effect of nanoparticle impact on material removal. Tribol T, 2008, 51: 718–722
Chen R L, Luo J B, Guo D. Dynamic phase transformation of crystalline silicon under the dry and wet impact studied by molecular dynamics simulation. J Appl Phys, 2010, 108: 073521
Chen R L, Luo J B, Guo D, et al. Extrusion formation mechanism on silicon surface under the silica cluster impact studied by molecular dynamics simulation. J Appl Phys, 2008, 104: 104907
Pan Y, Lu X C, Pan G S, et al. Performance of sodium dodecyl sulfate in slurry with glycine and hydrogen peroxide for copper-chemical mechanical polishing. J Electrochem Soc, 2010, 157: H1082–H1087
Zhang L C, Biddut A Q, Ali Y M. Dependence of pad performance on its texture in polishing mono-crystalline silicon wafers. Int J Mech Sci, 2010, 52: 657–662
Zarudi I, Han B S. Deformation and material removal rate in polishing silicon wafers. J Mater Process Technol, 2003, 140: 641–645
Marchman H M. Scanned probe metrology and its application to critical dimensions. Future FAB Int, 1997, 3: 345–354
Petri R, Brault P, Vatel O, et al. Silicon roughness induced by plasma etching. J Appl Phys, 1994, 75: 7498–7506
Spanos L, Liu Q, Irene E A, et al. Investigation of roughened silicon surfaces using fractal analysis. II. Chemical etching, rapid thermal chemical vapor deposition, and thermal oxidation. J Vac Sci Technol A, 1994, 12: 2653–2661
Lu F, Lee D, Byrnes D, et al. Blue LED growth from 2 inch to 8 inch. Sci China TechSci, 2011, 54: 33–37
Poler J C, McKay K K, Irene E A. Characterization of the Si/SiO2 interface morphology from quantum oscillations in fowler-nordheim tunneling currents. J Vac Sci Technol B, 1994, 12: 88–95
Griffith J E, Grigg D A. Dimensional metrology with scanning probe microscopes. J Appl Phys, 1993, 74: 83–109
Barrett R C, Quate C F. Imaging polished sapphire with atomic force microscopy. J Vac Sci Technol A, 1990, 8: 400–402
Michel B, Giza M, Krumrey M, et al. Effects of dielectric barrier discharges on silicon surfaces: Surface roughness, cleaning, and oxidation. J Appl Phys, 2009, 105: 073302–073309
McGrath J, Davis C. Polishing pad surface characterization in chemical mechanical planarization. J Mater Process Technol, 2004, 153–154: 666–673
Seidel H, Csepregi L, Heuberger A, et al. Anistropic etching of crystalline silicon in alkaline solutions. J Electrochem Soc, 1990, 137: 3612–3626
Thakurta D G, Borst C L, Schwendeman D W, et al. Pad porosity, compressibility and slurry delivery effects in chemical-mechanical planarization: modeling and experiments. Thin Solid Films, 2000, 366: 181–190
Song X L, Yang H P, Liu H Y, et al. Effects of polishing pressure on electrochemical characteristics of silicon wafers during CMP. J Electrochem Soc, 2008, 155: 323–326
Wang H B, Song Z T, Liu W L, et al. Effect of hydrogen peroxide concentration on surface micro-roughness of silicon wafer after final polishing. Microelectron Eng, 2011, 88: 1010–1015
Li Z, Ina K, Lefevre P, et al. Determining the effects of slurry surfactant, abrasive size and content on the tribology and kinetics of copper CMP. J Electrochem Soc, 2005, 152: G299–304
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Li, J., Liu, Y., Dai, Y. et al. Achievement of a near-perfect smooth silicon surface. Sci. China Technol. Sci. 56, 2847–2853 (2013). https://doi.org/10.1007/s11431-013-5364-5
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DOI: https://doi.org/10.1007/s11431-013-5364-5