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Theoretical study of piezotronic heterojunction

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Abstract

Due to the coupling of piezoelectric and semiconducting dual properties, much attention has been focused on the piezoelectric semiconductor materials, such as ZnO, ZnS, CdS and GaN. With the usage of these piezoelectric semiconductor materials, novel nanodevices have been demonstrated, from which a new field called piezotronics was formulated. The core of piezotronics is to study the mechanism of the piezoelectric effect on tuning the charge transport behavior across various junctions or interfaces, with potential applications in sensors, microelectromechanical systems, and force/pressure triggered electric devices. Here following the theoretical frame work of piezotronic effect, analytical solutions of piezoelectric heterojunction are presented to investigate the electrical transport behavior at a p-n junction. Numerical simulation is given for guiding future experimental measurements.

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Authors and Affiliations

  1. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China

    XiaoLong Feng, Yan Zhang & ZhongLin Wang

  2. Institute of Theoretical Physics, Lanzhou University, Lanzhou, 730000, China

    Yan Zhang

  3. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332-0245, USA

    ZhongLin Wang

Authors
  1. XiaoLong Feng
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  2. Yan Zhang
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  3. ZhongLin Wang
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Corresponding authors

Correspondence to Yan Zhang or ZhongLin Wang.

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Feng, X., Zhang, Y. & Wang, Z. Theoretical study of piezotronic heterojunction. Sci. China Technol. Sci. 56, 2615–2621 (2013). https://doi.org/10.1007/s11431-013-5358-3

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  • DOI: https://doi.org/10.1007/s11431-013-5358-3

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