Science China Technological Sciences

, Volume 56, Issue 8, pp 1870–1876

Fabrication and characterization of amorphous ITO/p-Si heterojunction solar cell

  • Bo He
  • HongZhi Wang
  • YaoGang Li
  • ZhongQuan Ma
  • Jing Xu
  • QingHong Zhang
  • ChunRui Wang
  • HuaiZhong Xing
  • Lei Zhao
  • DunDong Wang
Article

Abstract

Amorphous indium-tin-oxide (a-ITO) film was deposited by radio-frequency (RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell. The microstructural, optical and electrical properties of the a -ITO film were characterized by XRD, SEM, XPS, UV-VIS spectrophotometer, four-point probe and Hall effect measurement, respectively. The electrical properties of heterojunction were investigated by IV measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10−4 A cm−2, respectively. And the value of IF/IR (IF and IR stand for forward and reverse currents, respectively) at 1 V is found to be as high as 21.5. For the a-ITO/p-Si heterojunction solar cell, the a-ITO thin film acts not only as an emitter layer, but also as an anti-reflected coating film. The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%, under 100 mW cm−2 illumination (AM1.5 condition). And the open-circuit voltage (Voc), short-circuit current density (JSC), filll factor (FF) are 280 mV, 9.83 mA cm−2 and 39.9%, respectively. Because the ITO film deposited at low temperature is amorphous, it can effectively reduce the interface states between ITO and p-Si. The barrier height and internal electric field, which is near the surface of p-Si, can effectively be enhanced. Thus we can see the great photovoltaic effect.

Keywords

amorphous indium-tin-oxide (a-ITO) film radio-frequency (RF) magnetron sputtering heterojunction solar cell current-voltage (IV) characteristics 

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Copyright information

© Science China Press and Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Bo He
    • 1
  • HongZhi Wang
    • 1
  • YaoGang Li
    • 1
  • ZhongQuan Ma
    • 2
  • Jing Xu
    • 3
  • QingHong Zhang
    • 1
  • ChunRui Wang
    • 1
  • HuaiZhong Xing
    • 1
  • Lei Zhao
    • 2
  • DunDong Wang
    • 2
  1. 1.Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsDonghua UniversityShanghaiChina
  2. 2.Department of PhysicsShanghai UniversityShanghaiChina
  3. 3.Instrumental Analysis and Research CenterShanghai UniversityShanghaiChina

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