Abstract
We report the studies of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using reactive-sputtered La2O3 as the gate dielectric and the surface passivation layer. The device presents a maximum drain current of 829 mA/mm and a maximum transconductance of 105 mS/mm, while the gate leakage current in the reverse direction is reduced by two orders of magnitude and the forward gate voltage swing increased to +5 V without gate breakdown. Compared to HEMT devices of similar geometry, MISHEMTs present a significant drain current recovery form current collapse.
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Feng, Q., Wang, Q., Xing, T. et al. Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor using La2O3 gate dielectric. Sci. China Technol. Sci. 56, 629–632 (2013). https://doi.org/10.1007/s11431-012-5127-8
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DOI: https://doi.org/10.1007/s11431-012-5127-8