Abstract
This paper presents a single event transient (SET) suppressor circuit, which can suppress the effect of SET in charge pump (CP) on the whole PLL frequency synthesizers, and at the same time it brings little negative effect to the system during normal operation. Because the proposed SET suppressor circuit only includes a resistor, a PMOS and an NMOS device, little area penalty is introduced. By preventing SET propagating from CP to low pass filter (LPF) and VCO when a single event strikes on CP output node, the system shows excellent hardness to SET in CP. Mixed simulations are performed on TCAD workbench. The results show that a single event with an LET at 80 MeV cm2/mg can only induce approximately 2.3 mV disturbance on the control voltage of VCO.
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Han, B., Guo, Z., Wang, X. et al. A radiation-hardened-by-design technique for suppressing SET in charge pump of PLL frequency synthesizer. Sci. China Technol. Sci. 56, 286–292 (2013). https://doi.org/10.1007/s11431-012-5086-0
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DOI: https://doi.org/10.1007/s11431-012-5086-0