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Modeling to predict the time evolution of negative bias temperature instability (NBTI) induced single event transient pulse broadening

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Abstract

An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability (NBTI) degradation model, a novel analytical model is developed to predict the time evolution of the NBTI induced SET broadening in the production, and NBTI experiments and three-dimensional numerical device simulations are used to verify the model. At the same time, an analytical model to predict the time evolution of the NBTI induced SET broadening in the propagation is also proposed, and NBTI experiments and the simulation program with integrated circuit emphasis (SPICE) are used to verify the proposed model.

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Authors and Affiliations

  1. School of Computer, National University of Defense Technology, Changsha, 410073, China

    ShuMing Chen, JianJun Chen, YaQing Chi, FanYu Liu & YiBai He

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  1. ShuMing Chen
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  2. JianJun Chen
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  3. YaQing Chi
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  4. FanYu Liu
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  5. YiBai He
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Correspondence to JianJun Chen.

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Chen, S., Chen, J., Chi, Y. et al. Modeling to predict the time evolution of negative bias temperature instability (NBTI) induced single event transient pulse broadening. Sci. China Technol. Sci. 55, 1101–1106 (2012). https://doi.org/10.1007/s11431-012-4747-3

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  • DOI: https://doi.org/10.1007/s11431-012-4747-3

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