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The effect of P+ deep well doping on SET pulse propagation

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Abstract

The change of P+ deep well doping will affect the charge collection of the active and passive devices in nano-technology, thus affecting the propagated single event transient (SET) pulsewidths in circuits. The propagated SET pulsewidths can be quenched by reducing the doping of P+ deep well in the appropriate range. The study shows that the doping of P+ deep well mainly affects the bipolar amplification component of SET current, and that changing the P+ deep well doping has little effect on NMOS but great effect on PMOS.

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Authors and Affiliations

  1. School of Computer Science, National University of Defense Technology, Changsha, 410073, China

    JunRui Qin, ShuMing Chen, BiWei Liu, FanYu Liu & JianJun Chen

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  1. JunRui Qin
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  2. ShuMing Chen
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  3. BiWei Liu
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Correspondence to JunRui Qin.

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Qin, J., Chen, S., Liu, B. et al. The effect of P+ deep well doping on SET pulse propagation. Sci. China Technol. Sci. 55, 665–672 (2012). https://doi.org/10.1007/s11431-011-4644-1

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  • DOI: https://doi.org/10.1007/s11431-011-4644-1

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