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Research on single event transient pulse quenching effect in 90 nm CMOS technology

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Abstract

Since single event transient pulse quenching can reduce the SET (single event transient) pulsewidths effectively, the charge collected by passive device should be maximized in order to minimize the propagated SET. From the perspective of the layout and circuit design, the SET pulsewidths can be greatly inhibited by minimizing the layout spacing and signal propagation delay, which sheds new light on the radiation-hardened ICs (integrated circuits) design. Studies show that the SET pulsewidths of propagation are not in direct proportion to the LET (linear energy transfer) of incident particles, thus the defining of the LET threshold should be noted when SET/SEU (single event upset) occurs for the radiation-hardened design. The capability of anti-radiation meets the demand when LET is high but some soft errors may occur when LET is low. Therefore, radiation experiments should be focused on evaluating the LET that demonstrates the worst response to the circuit.

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Authors and Affiliations

  1. School of Computer Science, National University of Defense Technology, Changsha, 410073, China

    JunRui Qin, ShuMing Chen, BiWei Liu, JianJun Chen, Bin Liang & Zheng Liu

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  1. JunRui Qin
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  2. ShuMing Chen
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  3. BiWei Liu
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  4. JianJun Chen
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  5. Bin Liang
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  6. Zheng Liu
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Correspondence to JunRui Qin.

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Qin, J., Chen, S., Liu, B. et al. Research on single event transient pulse quenching effect in 90 nm CMOS technology. Sci. China Technol. Sci. 54, 3064–3069 (2011). https://doi.org/10.1007/s11431-011-4579-6

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  • DOI: https://doi.org/10.1007/s11431-011-4579-6

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