Abstract
SnO2-based varistor samples doped with Co2O3, Nb2O5 and Cr2O3 were prepared by ball-mixed oxide method. The microstructure, nonlinear I–V characteristic and surge current performances of these samples were investigated. This paper mainly focused on the dependence of the residual voltage ratio behavior of SnO2-based varistors on Nb2O5 addition, different factors influencing the residual voltage ratio in different concentration of Nb2O5 were analyzed. The Nb2O5 addition influences its residual voltage ratio by changing the grain size, forming defects (especially the free electrons) and cumulative effect. The measured results indicated that the optimally obtained sample with 0.07mol% Nb2O5 possesses the lowest residual voltage ratio of 1.86, the corresponding nonlinear coefficient and the threshold electric field are 42.6 and 364.6 V/mm, respectively.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
He J L, Hu J, Meng B W, et al. Requirement of ultra-high voltage GIS arrester to voltage gradient of metal-oxide varistor. Sci China Ser E-Tech Sci, 2009, 52(2): 450–455
Chen Q H, He J L, Tan K X, et al. Influence of grain size on distribution of temperature and thermal stress in ZnO varistor ceramics. Sci China Ser E-Tech Sci, 2002, 45(4): 337–347
Liu J, Hu J, He J L, et al. Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y2O3. Sci China Ser E-Tech Sci, 2009 52(12): 3668–3673
He J L, Hu J, Lin Y H. ZnO varistors with high voltage gradient and low leakage current by doping rare-earth oxide. Sci China Ser E-Tech Sci, 2008, 51(6): 693–701
Pianaro S A, Bueno P R, Longo E, et al. A new SnO2-based varistor system. J Mater Sci Lett, 1995, 14(10): 692–694
Gupta T K. Application of zin oxide varistors. J Am Ceram Soc, 1990, 73(7): 1817–1840
Elfwing M, Olsson E. Electron holography study of active interface in zinc oxide varistor materials. J Appl Phys, 2002, 92(9): 5272–5280
Clarke D R. Varistor ceramics. J Am Ceram Soc, 1999, 82(3): 485–502
Santhosh P N, Date S K. A new composition of ceramic varistor: SnO2 doped with (Co, Nb, Al). Bull Mater Sci, 1996, 19(4): 713–715
Peiteado M, De la Rubia M A, Velasco M J, et al. Bi2O3 vaporization from ZnO-based varistors. J Eut Ceram Soc, 2005, 25(9): 1675–1678
Bueno P R, Olivera M M, Bacelar W K, et al. Analysis of the admittance-frequency and capacitance-voltage of dense SnO2-CoO-based varistor ceramics. J Appl Phys, 2002, 91(9): 6007–6014
Bueno P R, Varela J A, Barrado C M, et al. A comparative study of thermal conductivity in ZnO- and SnO2-based varistor systems. J Am Ceram Soc, 2005, 88(9): 2629–2631
Lu Z Y, Chen Z W, Wu J Q. SnO2-based varistor capable of withstanding surge current. J Ceram Soc Jpn, 2009, 117(7): 851–855
Ramirez M A, Bassi W, Parra R, et al. Comparative electrical behavior at low and high current of SnO2- and ZnO-based varistors. J Am Ceram Soc, 2008, 91(7): 2402–2404
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Wei, Q., He, J. & Hu, J. Dependence of residual voltage ratio behavior of SnO2-based varistors on Nb2O5 addition. Sci. China Technol. Sci. 54, 1415–1418 (2011). https://doi.org/10.1007/s11431-011-4375-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11431-011-4375-3