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A study of the operating parameters and barrier thickness of Al0.08In0.08Ga0.84N/Al x In y Ga1−x−y N double quantum well laser diodes

Science China Technological Sciences volume 54, pages 47–51 (2011)Cite this article

Abstract

The operating parameters such as the internal quantum efficiency (ηi), internal loss (αi) and transparent threshold current density (J 0) of double quantum well laser diodes were investigated and identified using the program, Integrated System Engineering-Technical Computer Aided Design (ISE-TCAD). Various thicknesses (6, 7, 8, 10, 12 nm) of Al x In y Ga1−x−y N barriers with (3 nm) Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current (I th), and the highest output power (P op) were 116 mA and 196 mW respectively, at barriers thickness of 6 nm, Al mole fraction of 10% and In mole fraction of 1%, at an emission wavelength of 359.6 nm.

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Authors and Affiliations

  1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800, Penang, Malaysia

    A. J. Ghazai, H. Abu Hassan & Z. Hassan

  2. Material Engineering Department, College of Engineering, University of Kufa, Najaf, 00964, Iraq

    S. M. Thahab

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  1. A. J. Ghazai
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  2. S. M. Thahab
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  3. H. Abu Hassan
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  4. Z. Hassan
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Correspondence to A. J. Ghazai.

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Ghazai, A.J., Thahab, S.M., Abu Hassan, H. et al. A study of the operating parameters and barrier thickness of Al0.08In0.08Ga0.84N/Al x In y Ga1−x−y N double quantum well laser diodes. Sci. China Technol. Sci. 54, 47–51 (2011). https://doi.org/10.1007/s11431-010-4183-1

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  • DOI: https://doi.org/10.1007/s11431-010-4183-1

Keywords

  • AlInGaN
  • quaternary
  • UV laser diode
  • quantum well
  • barrier thickness