Abstract
Si-doped (11–20) a-plane GaN grown on (1–102) r-plane sapphire substrate was obtained by metal organic chemical vapor deposition. The optical and electrical properties of the Si-doped a-plane GaN films were investigated by photoluminescence spectroscopy, high-resolution X-ray diffraction, atomic force microscopy and Hall measurement. The results showed that the morphology and the crystal quality slightly degraded with Si doping. The yellow luminescence was enhanced with increasing the flow rate of the SiH4. The significant improvement of the mobility should associate with some of the vacancy filled with the Si.
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Xu, S., Zhou, X., Hao, Y. et al. Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire. Sci. China Technol. Sci. 53, 2363–2366 (2010). https://doi.org/10.1007/s11431-010-4049-6
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DOI: https://doi.org/10.1007/s11431-010-4049-6