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Improvement of extraction efficiency for GaN-based light emitting diodes

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Abstract

A simple, low cost method for mass production to enhance the light extraction efficiency of GaN-related LEDs was proposed. With appropriate process parameters, the nature lithography of nanosphere can be used to fabricate two-dimensional nanostructures, including the nanomesh ZnO layer, photonic crystal (PhC) patterned p-GaN, and patterned sapphire substrates. Based on preliminary results, the extraction efficiencies of LEDs with these nanostructures can thus be improved and the nature lithography is demonstrated to be a promising method to be widely exploited in the manufacture of all kinds of LED devices.

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Authors and Affiliations

  1. Department of Electrical Engineering, “National”, Cheng-Kung University, Tainan, 70101, Taiwan, China

    YanKuin Su, ChunYuan Huang, JianJhong Chen, ChienChih Kao & ChunFu Tsai

  2. Department of Electrical Engineering, Kun Shan University of Technology, Yung-Kang City, 70101, Taiwan, China

    YanKuin Su

  3. Institute of Microelectronics, “National”, Cheng-Kung University, Tainan, 70101, Taiwan, China

    YanKuin Su, ChunYuan Huang, JianJhong Chen, ChienChih Kao & ChunFu Tsai

  4. Advanced Optoelectronic Technology Center, “National”, Cheng Kung University, Tainan, 70101, Taiwan, China

    YanKuin Su, ChunYuan Huang, JianJhong Chen, ChienChih Kao & ChunFu Tsai

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  1. YanKuin Su
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  2. ChunYuan Huang
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  3. JianJhong Chen
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  4. ChienChih Kao
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  5. ChunFu Tsai
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Correspondence to YanKuin Su.

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Su, Y., Huang, C., Chen, J. et al. Improvement of extraction efficiency for GaN-based light emitting diodes. Sci. China Technol. Sci. 53, 322–325 (2010). https://doi.org/10.1007/s11431-010-0061-0

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  • DOI: https://doi.org/10.1007/s11431-010-0061-0

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