Abstract
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction temperature variation due to bonding medium defects. Transient thermal measurement was performed to evaluate LED’s junction temperature. Thermal resistance from chip to lead frame was 20 K/W in our sample LED. It was suggested that only 60% of the surface area of the bonding medium was involved in the thermal conduction. This result was also supported by the SEM image. Blocking of thermal path induced by ineffective area of the bonding medium was regarded as a factor of its thermal resistance. Thus, the effective area of the bonding medium should be included in the FEM model and considered as another important factor in high power LED’s thermal management.
Similar content being viewed by others
References
Cheng T, Luo X B, Huang S Y, et al. Simulation on thermal characteristics of LED chips for design optimization. In: 2008 International Conference on Electronic Packaging Technology & High Density Packaging. USA: IEEE, 2008. 1 and 2: 464–467
Arik M, Weaver S. Chip scale thermal management of high brightness LED packages. Proc SPIE, 2004, 5530: 214–223
Christensen A, Ha M, Graham S. Thermal management methods for compact high power LED. Proc SPIE, 2007, 6669: 66690Z1–66690Z19
Lin L. Research on the electric thermal properties and aging mechanism of flip chip GaN-based LED (in Chinese). Dissertation of the Master Degree. Beijing: Peking University, 2007. 20
Lin L, Chen Z Z, Chen T, et al. Characteristics of the accelerated aging white LEDs (in Chinese). Chinese J Luminescence, 2005, 26: 617–621
Lee T H, Kim L, Hwang W J, et al. Thermal analysis of GaN-based LEDs using the finite element method and unit temperature profile approach. Phys Stat Sol (b), 2004, 241: 2681–2684
Zhang G C, Feng S W, Wang L, et al. The study on the thermal behavior of packaged power LEDs. In: 2008 ICSICT 9th International Conference on Solid-State and Integrated-Circuit Technology, USA: IEEE, 2008. 1211–1214
Sun Y J, Yu T J, Chen Z Z, et al. Properties of GaN-based light-emitting diode thin filmchips fabricated by laser lift-off and transferred to Cu. Semicond Sci Tech, 2008, 23125022
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Jiang, Y., Li, Z., Sun, Y. et al. Analysis of junction temperatures in high-power GaN-based LEDs. Sci. China Technol. Sci. 53, 297–300 (2010). https://doi.org/10.1007/s11431-010-0040-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11431-010-0040-5