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Advances in organic field-effect transistors and integrated circuits

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Abstract

Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in materials, device performance, OFETs based circuits in recent years. In this article we introduce the advances in organic semiconductor materials, OFETs based integrating techniques, and in particular highlight the recent progress. Finally, the prospects and problems of OFETs are discussed.

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Authors and Affiliations

  1. Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Hong Wang, ZhuoYu Ji, Ming Liu, LiWei Shang, Ge Liu, XingHua Liu & Jiang Liu

  2. School of Physics Science and Technology, Lanzhou University, Lanzhou, 730000, China

    Hong Wang & YingQuan Peng

Authors
  1. Hong Wang
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  2. ZhuoYu Ji
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  3. Ming Liu
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  4. LiWei Shang
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  5. Ge Liu
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  6. XingHua Liu
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  7. Jiang Liu
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Correspondence to Ming Liu.

Additional information

Supported by the National Basic Research Program of China (“973” Project) (Grant Nos. 2006CB806204, 2009CB939703) and the National Natural Science Foundation of China (Grant Nos. 90607022, 60676001, 60676008, 60825403)

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Wang, H., Ji, Z., Liu, M. et al. Advances in organic field-effect transistors and integrated circuits. Sci. China Ser. E-Technol. Sci. 52, 3105–3116 (2009). https://doi.org/10.1007/s11431-009-0238-6

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  • DOI: https://doi.org/10.1007/s11431-009-0238-6

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