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Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

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Abstract

This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency (RF) magnetron sputtering on amorphous glass substrates. The process parameters included RF power and working pressure. Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects. However, when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse. At a 200 W RF power and 1 Pa working pressure, the ZnO thin film with an optical band gap energy of 3.225 eV was obtained.

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References

  1. Liu Y H, Sun W D. Preparation of ZnO thin films by RF magnetron sputtering and their properties (in Chinese). J Jinan Univer (Nat Sci & Med Edit), 2004, 25(3): 289–292

    Google Scholar 

  2. Zhang J, Xie Y Z, Xie E Q, et al. Photocatalysis properties of ZnO films grown by two-step oxidation (in Chinese). Chin J Vac Sci Tech, 2008, 28(4): 355–359

    Google Scholar 

  3. Yang L R, Jin Z G, Bu S J, et al. Preparation and optical properties of ZnO thin films (in Chinese). Ord Mat Sci Eng, 2004, 27(1): 34–38

    Google Scholar 

  4. Im S, Jin B J, Yi S. Ultraviolet emission and microstructural evolution in pulsed-laser-deposited ZnO films. J Appl Phys, 2000, 87(45): 4558–4561

    Article  Google Scholar 

  5. Zhou B, Wang J L, Pan Y D, et al. Fabrication and physical properties of high-quality Zinc Oxide thin films. In: Proceedings of Sixth International Conference on Thin Film Physics and Applications. Shanghai: SPIE, 2008. 69840S-4

    Google Scholar 

  6. Srikant V, Clarke D R. On the optical band gap of zinc oxide. J Appl Phys, 1998, 83(10): 5447–5451

    Article  Google Scholar 

  7. Kim S Y, Seo J M, Jang H W, et al. Effects of H2 ambient annealing in fully 002-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition. Appl Surf Sci, 2009, 255(46): 4616–4622

    Article  Google Scholar 

  8. Mei Z X, Zhang X Q, Yi L X, et al. Preparation and photoluminescent properties of ZnO thin film (in Chinese). Chin J Lumin, 2002, 23(4): 389–392

    Google Scholar 

  9. Geng Q, Wang J H, Wang S G. Study on the parameter of ZnO thin films deposited by RF magnetron sputtering (in Chinese). Micro Tech, 2007, 5(2): 250–253

    Google Scholar 

  10. Bhuvana K P, Elanchezhiyan J, Gopalakrishnan N, et al. Optimization of Zn1−x AlxO film for antireflection coating by RF sputtering. J Alloy Compd, 2009, 473(4): 534–537

    Article  Google Scholar 

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Correspondence to JinLiang Wang.

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Supported by the National Natural Science Foundation of China (Grant Nos. 50772006, 10432050)

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Tang, N., Wang, J., Xu, H. et al. Optical characterization of ZnO thin films deposited by RF magnetron sputtering method. Sci. China Ser. E-Technol. Sci. 52, 2200–2203 (2009). https://doi.org/10.1007/s11431-009-0230-1

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  • DOI: https://doi.org/10.1007/s11431-009-0230-1

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