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Cu2ZnSnS4 thin films prepared by sulfurizing different multilayer metal precursors

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Abstract

Cu2ZnSnS4 (CZTS) thin films were successfully fabricated on glass substrates by sulfurizing Cu-Sn-Zn multilayer precursors, which were deposited by ion beam sputtering and RF magnetron sputtering, respectively. The structural, electrical and optical properties of the prepared films under various processing conditions were investigated in detail. Results showed that the as-deposited CZTS thin films with the precursors by both ion beam sputtering and RF magnetron sputtering have a composition near stoichiometric. The crystallization of the samples, however, has a strong dependence on the atomic percent of constituents of the prepared CZTS films. A single phase stannite-type structure CZTS with a large absorption coefficient of 104/cm in the visible range could be obtained after sulfurization at 520°C for 2 h. The samples relative to the RF magnetron sputtering showed a low resistivity of 0.073 Ωcm and band gap energy of about 1.53 eV. The samples relative to the ion beam sputtering exhibited a resistivity of 0.36 Ωcm and the band gap energy is about 1.51 eV.

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Authors and Affiliations

  1. School of Physical Science and Technology, Zhanjiang Normal University, Zhanjiang, 524048, China

    Jun Zhang & LeXi Shao

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  1. Jun Zhang
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  2. LeXi Shao
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Correspondence to LeXi Shao.

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Supported by the National Natural Science Foundation of China (Grant No. 10574106), the Planned Science and Technology Project of Guangdong Province (Grant No.2003C05005) and the Natural Science Fund of Zhanjiang Normal University (Grant No.200801)

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Zhang, J., Shao, L. Cu2ZnSnS4 thin films prepared by sulfurizing different multilayer metal precursors. Sci. China Ser. E-Technol. Sci. 52, 269–272 (2009). https://doi.org/10.1007/s11431-009-0013-8

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  • DOI: https://doi.org/10.1007/s11431-009-0013-8

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