Abstract
This paper reports the bulk synthesis route of the aligned and non-aligned high-quality α-Si3N4 nanowires (NWS) which were grown directly from the Si substrate by vapor phase deposition at 1050°. The as-grown products were characterized by employing XRD, SEM, HRTEM and photoluminescence. The microscopic results revealed that the products consist of single crystalline aligned and non-aligned α-Si3N4 NWs having a same diameter range of 30–100 nm and different lengths of about hundreds of microns. The XRD observation revealed that the products consist of α-phase Si3N4 NWs. The room temperature PL spectra indicated that the NWs have good emission property. The non-aligned NWs were formed at lower temperature as compared with aligned NWs. Our method is a simple and one-step procedure to synthesize the bulk-quantity and high-purity aligned and non-aligned α-Si3N4 NWs at a relatively low temperature. The possible growth mechanism was also briefly discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Pierson H. Hand Book of Refractory Carbides and Nitrides. New Jersey: Noyes Publications, 1996
Chen H, Cao Y G, Xiang X, et al. Si-N nanowire formation from silicon nano and microparticles. J Alloys Compound, 2001, 325 L1
Tang C C, Bando Y, Sato T, et al. Comparative studies on BN-coatings on SiC and Si3N4 nanowires. J Mater Chem, 2002, 12: 1910–1913
Ziegler G, Heinrich J, Wotting G. Review—relationship between processing, microstructure, and properties of dense and reaction-bonded silicon nitride. J Mater Sci, 1987, 22: 3041–3086
Kato K, Inoue Z, Kijima K, et al. Structural approach to the problem of oxygen content in alpha silicon nitride. J Am Cer Soc, 1975, 58(3): 90–91
Grun R. The crystal structure of β-Si3N4: structural and stability considerations between α- and β-Si3N4. Acta Crystal, 1979, B35: 800–804
Zhang Y J, Wang N L, He R R, et al. Reversible bending of Si3N4 nanowires. J Mate Res, 2000, 15: 1048–1051
Gundiah G, Madhav G V, Govindaraj A, et al. Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires. J Mater Chem, 2002, 12: 1606–1611.
Zhang Y J, Wang N L, Gao S P, et al. A simple method to synthesize nanowires. Chem Mater, 2002, 14: 3564–3568.
Zhang Y J, Wang N L, He R R, et al. A simple method to synthesize Si3N4 and Si/SiO2 nanowires from Si or Si/SiO2. J Crystal Growth, 2001, 233: 803–808
Kim H Y, Park J, Yang H. Synthesis of silicon nitride nanowires directly from the silicon substrates. Chem Phys Lett, 2003, 372: 269–274
Wu X C, Song W H, Zhao B, et al., Synthesis of coaxial nanowires of silicon nitride sheathed with silicon and silicon oxide. Solid State Comm, 2000, 115: 683–686
Han W Q, Fan S S, Li Q Q, et al. Synthesis of silicon nitride nanorods using carbon nanotube as a template. Appl Phys Lett, 1997, 71(16): 2271–2273
Wang F, Jin G Q, Guo X Y. Sol-gel synthesis of Si3N4 nanowires and nanotubes. Mater Lett, 2006, 60: 330–333
Tang K B, Hu J H, Lu Q Y, et al. A novel low-temperature synthetic route to crystalline Si3N4. Adv Mater, 1999, 11: 653–655
Author information
Authors and Affiliations
Corresponding author
Additional information
Supported by the National 973 Project of China and the National Natural Science Foundation of China (Grant No. 90206046)
Rights and permissions
About this article
Cite this article
Ahmad, M., Zhao, J., Zhang, F. et al. One-step synthesis route of the aligned and non-aligned single crystalline α-Si3N4 nanowires. Sci. China Ser. E-Technol. Sci. 52, 1–5 (2009). https://doi.org/10.1007/s11431-009-0010-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11431-009-0010-y