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Inducing effect of Pb(Zr0.4Ti0.6)O3 thin film derived by different processes in BiFeO3/Pb(Zr0.4Ti0.6)O3 multilayer capacitor at room temperature

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Abstract

BiFeO3/PZT multilayer capacitor was prepared on Pt(100)/Ti/SiO2/Si(100) substrate. PZT buffer layer was derived by MOCVD method (label: PZT1) and sputtering method (label: PZT2) respectively. XRD analysis indicated that high (110) orientation of BFO in the BFO/PZT1 structure was achieved. SEM analysis indicated a better microstructure in the BFO/PZT1 structure compared with BFO/PZT2. The remnant polarization of the BFO/PZT1 was 82.5 μ C/cm2 at an applied voltage of 8 V, compared with that of 25.2 μC/cm2 in the BFO/PZT2 structure. The BFO/PZT1 multilayer exhibited little polarization fatigue (<1.5%) upon 1×1010 switching cycles, at an applied voltage of 4 V. The leakage current density was about 2×10−7 A/cm2 at an applied voltage 4 V, in the BFO/PZT1 capacitor. All the results indicated that PZT can act as an inducing layer to the BFO and the MOCVD derived PZT has more inducing effect to the BFO thin film at room temperature.

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Authors and Affiliations

  1. Institute of Microelectronics, Tsinghua University, Beijing, 100084, China

    Dan Xie, YongYuan Zang, YaFeng Luo, TianLing Ren & LiTian Liu

  2. College of Material Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China

    ZhiMin Dang

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  1. Dan Xie
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  2. YongYuan Zang
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  3. YaFeng Luo
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  4. TianLing Ren
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  5. LiTian Liu
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  6. ZhiMin Dang
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Correspondence to Dan Xie.

Additional information

Supported by the National Natural Science Foundation of China (Grant No. 60601003), Ying Tong Education Foundation (Grant No. 101063), and International Cooperation Project from Ministry of Science and Technology of China (Grant No. 2008DFA12000)

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Xie, D., Zang, Y., Luo, Y. et al. Inducing effect of Pb(Zr0.4Ti0.6)O3 thin film derived by different processes in BiFeO3/Pb(Zr0.4Ti0.6)O3 multilayer capacitor at room temperature. Sci. China Ser. E-Technol. Sci. 52, 10–14 (2009). https://doi.org/10.1007/s11431-009-0007-6

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  • DOI: https://doi.org/10.1007/s11431-009-0007-6

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