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High performance 1.3 μm InGaAsN superluminescent diodes

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Abstract

High performance 1.3 μm InGaAsN superluminescent diodes (SLDs) were fabricated with Schottky contact. The structure was grown by metal organic chemical vapor deposition (MOCVD). Output power of 3 mW was obtained in continuous wave (CW) mode at room temperature. The full width at half maximum (FWHM) of the emission spectrum was 30 nm. The devices operated up to 100°C.

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Authors and Affiliations

  1. National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, China

    Yi Qu, Hui Li, BaoXue Bo, Xin Gao & GuoJun Liu

  2. Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore

    J. X. Zhang

Authors
  1. Yi Qu
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  2. Hui Li
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  3. J. X. Zhang
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  4. BaoXue Bo
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  5. Xin Gao
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  6. GuoJun Liu
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Corresponding author

Correspondence to Yi Qu.

Additional information

Supported by the National Natural Science Foundation of China (Grant No. 60677008), and the Foundation of National Key Lab on High Power Semiconductor Laser (Grant No. 9140C3102060703)

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Qu, Y., Li, H., Zhang, J.X. et al. High performance 1.3 μm InGaAsN superluminescent diodes. Sci. China Ser. E-Technol. Sci. 52, 2396–2399 (2009). https://doi.org/10.1007/s11431-008-0233-3

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  • DOI: https://doi.org/10.1007/s11431-008-0233-3

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