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Ferroelectric properties of Bi3.4Ho0.6Ti3O12 thin films prepared by sol-gel method

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Abstract

We have prepared the Ho-substituted bismuth titanate (Bi3.4Ho0.6Ti3O12, BHT) thin films on Pt/Ti/SiO2/Si substrates using sol-gel method. The crystal structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The BHT film shows a single phase of Bi-layered Aurivillius structure and dense microstructure. The 2Pr and 2Ec of the 600-nm-thick BHT film were 38.4 μC/cm2 and 376.1 kV/cm, respectively at applied electric field 500 kV/cm. The dielectric constant and dielectric loss are about 310 and 0.015 at a frequency of 1 MHz, respectively. The Pr value decreased to 93% of its pre-fatigue values after 4.46×109 switching cycles at 1 MHz frenquency, and the BHT film shows good insulating behavior according to the test of leakage current.

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Authors and Affiliations

  1. School of Materials Science and Technology, Wuhan University of Technology, Wuhan, 430070, China

    ChengJu Fu & ZhiXiong Huang

  2. School of Mechanical Engineering, Chongqing University of Science and Technology, Chongqing, 400050, China

    Jie Li

  3. Department of Physics, Wuhan University, Wuhan, 430072, China

    DongYun Guo

Authors
  1. ChengJu Fu
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  2. ZhiXiong Huang
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  3. Jie Li
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  4. DongYun Guo
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Correspondence to DongYun Guo.

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Supported by the Hubei Province Natural Science Foundation (Grant No. 2007ABA309)

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Fu, C., Huang, Z., Li, J. et al. Ferroelectric properties of Bi3.4Ho0.6Ti3O12 thin films prepared by sol-gel method. Sci. China Ser. E-Technol. Sci. 51, 1439–1444 (2008). https://doi.org/10.1007/s11431-008-0105-x

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  • DOI: https://doi.org/10.1007/s11431-008-0105-x

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