Abstract
Nanoscale Ta-based diffusion barrier thin-films and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. Then the samples were rapidly thermal-annealed (RTA) by tungsten halide lamp. The resistance properties, structure and surface morphology of the thin-films were investigated by four-point probe (FPP) sheet resistance measurement, AFM, SEM-EDS, Alpha-Step IQ Profilers and XRD. The experimental results showed that agglomeration, oxidation and stabilization effects are concurrent. And resistance increasing and decreasing are coexistent after RTA. The formation of high resistance Cu3Si due to inter-diffusion between Cu and Si and more intensive electron scattering resulting from rougher surface caused the sheet resistance to increase abruptly after high temperature RTA.
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Supported by the National Natural Science Foundation of China (Grant No. 60371046)
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Zhou, J., Chen, H. & Li, Y. Nanoscale Ta-based diffusion barrier thin-films and their resistance properties. Sci. China Ser. E-Technol. Sci. 51, 1017–1023 (2008). https://doi.org/10.1007/s11431-008-0089-6
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DOI: https://doi.org/10.1007/s11431-008-0089-6